DMA204020R Panasonic

DMA204020R electronic component of Panasonic
DMA204020R Panasonic
DMA204020R Bipolar Transistors - BJT
DMA204020R  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMA204020R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DMA204020R Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. DMA204020R
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
Datasheet: DMA204020R Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3671
10$ 0.5856
100$ 0.4491
500$ 0.4012
1000$ 0.2647
3000$ 0.2344
9000$ 0.2256
24000$ 0.2205
45000$ 0.2205
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMA204020R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMA204020R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DMA20402 Unit: mm Silicon PNP epitaxial planar type For general amplication Features High forward current transfer ratio h with excellent linearity FE Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B5 Basic Part Number Dual DSA2002 (Individual) Packaging 1: Emitter (Tr1) 4: Emitter (Tr2) DMA204020R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) 2: Base (Tr1) 5: Base (Tr2) 3: Collector (Tr2) 6: Collector (Tr1) Absolute Maximum Ratings T = 25C a Panasonic Mini6-G4-B JEITA SC-74 Parameter Symbol Rating Unit Code SOT-457 Collector-base voltage (Emitter open) V 60 V CBO Collector-emitter voltage (Base open) V 50 V CEO (C1) (B2) (E2) Tr1 6 5 4 Emitter-base voltage (Collector open) V 5 V EBO Tr2 Collector current I 500 mA C Tr1 Tr2 Peak collector current I 1 A CP Total power dissipation P 300 mW T 1 2 3 Junction temperature T 150 C (E1) (B1) (C2) j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E h V = 10 V, I = 150 mA 120 340 FE1 CE C 1 * Forward current transfer ratio h V = 10 V, I = 500 mA 40 FE2 CE C 1 * Collector-emitter saturation voltage V I = 300 mA, I = 30 mA 0.2 0.6 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 300 mA, I = 30 mA 0.9 1.5 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 130 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 7.3 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * Publication date: December 2013 Ver. EED 1DMA20402 DMA20402 IC-VCE DMA20402 hFE-IC DMA20402 PT-Ta P T I V h I T a C CE FE C 120 300 400 V = 10 V T = 25C CE a 100 250 T = 85C a 300 80 I = 500 A 200 B 25C 400 A 200 60 150 300 A 40C 40 100 200 A 100 100 A 20 50 0 0 0 2 3 0 2 4 6 8 10 12 1 10 10 10 0 40 80 120 160 200 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMA20402 VCEsat-IC DMA20402 IC-VBE DMA20402 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 600 25 I / I = 10 V = 10 V I = 0 C B CE E f =1 MHz 25C T = 25C 500 a 20 T = 85C a 1 400 15 40C 300 10 0.1 200 T = 85C a 5 40C 100 25C 0.01 0 0 2 3 1 10 10 10 0 0.4 0.8 1.2 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DMA20402 fT-IC f I T C 200 V = 10 V CE T = 25C a 160 120 80 40 0 0.1 1 10 100 Collector current I (mA) C Ver. EED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Total power dissipation P mW T CE(sat) T Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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