DMA20403 Unit: mm Silicon PNP epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplication Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B9 Basic Part Number 1: Emitter (Tr1) 4: Emitter (Tr2) DSA2001 + DSA2002 (Individual) 2: Base (Tr1) 5: Base (Tr2) 3: Collector (Tr2) 6: Collector (Tr1) Packaging Panasonic Mini6-G4-B DMA204030R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) JEITA SC-74 Code SOT-457 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit (C1) (B2) (E2) 6 5 4 Collector-base voltage (Emitter open) V 60 V CBO Collector-emitter voltage (Base open) V 50 V CEO Tr1 Tr2 Tr1 Emitter-base voltage (Collector open) V 7 V EBO Collector current I 100 mA C 1 2 3 (E1) (B1) (C2) Peak collector current I 200 mA CP Collector-base voltage (Emitter open) V 60 V CBO Collector-emitter voltage (Base open) V 50 V CEO Tr2 Emitter-base voltage (Collector open) V 5 V EBO Collector current I 500 mA C Peak collector current I 1 A CP Total power dissipation P 300 mW T Junction temperature T 150 C j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Publication date: December 2013 Ver. CED 1DMA20403 Electrical Characteristics T = 25C3C a Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.2 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 2 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E h V = 10 V, I = 150 mA 120 340 FE1 CE C 1 * Forward current transfer ratio h V = 10 V, I = 500 mA 40 FE2 CE C 1 * Collector-emitter saturation voltage V I = 300 mA, I = 30 mA 0.2 0.6 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 300 mA, I = 30 mA 0.9 1.5 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 130 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 7.3 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * Common characteristics chart DMA20403 PT-Ta P T T a 400 300 200 100 0 0 40 80 120 160 200 Ambient temperature T (C) a Ver. CED 2 Total power dissipation P (mW) T