DMC20401 Unit: mm Silicon NPN epitaxial planar type For general amplication Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: A8 Basic Part Number Dual DSC2001 (Individual) 1: Emitter (Tr1) 4: Emitter (Tr2) 2: Base (Tr1) 5: Base (Tr2) Packaging 3: Collector (Tr2) 6: Collector (Tr1) DMC204010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic Mini6-G4-B JEITA SC-74 Absolute Maximum Ratings T = 25C a Code SOT-457 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 60 V CBO (C1) (B2) (E2) 6 5 4 Collector-emitter voltage (Base open) V 50 V CEO Tr1 Emitter-base voltage (Collector open) V 7 V EBO Tr2 Tr1 Tr2 Collector current I 100 mA C Peak collector current I 200 mA CP 1 2 3 (E1) (B1) (C2) Total power dissipation P 300 mW T Junction temperature T 150 C j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.13 0.3 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 1.5 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2013 Ver. EED 1DMC20401 DMC20401 PT-Ta DMC20401 IC-VCE DMC20401 hFE-IC P T I V h I T a C CE FE C 350 120 600 T = 25C V = 10 V a CE 300 100 500 250 T = 85C a 80 400 I = 250 A B 200 200 A 25C 60 300 150 150 A 40C 40 200 100 100 A 20 100 50 A 50 0 0 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0.1 1 10 100 ( ) Ambient temperature T C Collector-emitter voltage V (V) a Collector current I (mA) CE C DMC20401 IC-VBE DMC20401 Cob-VCB DMC20401 VCEsat-IC V I I V C V CE(sat) C C BE ob CB 120 10 I / I = 10 C B V = 10 V CE 4.0 25C 100 T = 85C a 80 1 3.0 40C 60 2.0 40 0.1 T = 85C a 1.0 20 40C 25C 0 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 0.1 1 10 100 Base-emitter voltage V (V) Collector-base voltage V (V) Collector current I (mA) BE CB C DMC20401 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. EED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) T CE(sat) ( ) Total power dissipation P mW T Collector current I (mA) Collector current I (mA) C C Collector output capacitance C (pF) Forward current transfer ratio h ob FE (Common base, input open circuited)