DMC204C0 Unit: mm Silicon NPN epitaxial planar type For low frequency amplication Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: D5 Basic Part Number Dual DSC2C01 (Individual) 1: Emitter (Tr1) 4: Emitter (Tr2) 2: Base (Tr1) 5: Base (Tr2) Packaging 3: Collector (Tr2) 6: Collector (Tr1) DMC204C00R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic Mini6-G4-B JEITA SC-74 Absolute Maximum Ratings T = 25C a Code SOT-457 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 100 V CBO (C1) (B2) (E2) 6 5 4 Collector-emitter voltage (Base open) V 100 V CEO Tr1 Emitter-base voltage (Collector open) V 15 V EBO Tr2 Tr1 Tr2 Collector current I 20 mA C Peak collector current I 50 mA CP 1 2 3 (E1) (B1) (C2) Total power dissipation P 300 mW T Junction temperature T 150 C j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 100 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 100 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 15 V EBO E C Collector-base cutoff current (Emitter open) I V = 60 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 60 V, I = 0 1 A CEO CE B Forward current transfer ratio h V = 10 V, I = 2 mA 400 1 200 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.05 0.20 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 140 MHz T CE C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2014 Ver. CED 1DMC204C0 DMC204C0 PT-Ta DMC204C0 IC-VCE DMC204C0 hFE-IC P T I V h I T a C CE FE C 350 50 1 600 70 A Pulse test 80 A 90 A T = 25C V = 10 V 300 a CE 60 A 40 T = 85C a 1 200 I = 100 A 50 A B 250 40 A 25C 30 200 30 A 800 40C 150 20 20 A 100 400 10 10 A 50 0 0 0 1 2 0 40 80 120 160 200 0 2 4 6 8 10 12 10 1 10 10 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMC204C0 VCEsat-IC DMC204C0 IC-VBE DMC204C0 Cob-VCB V I I V C V CE(sat) C C BE ob CB 5 10 20 I / I = 10 I = 0 C B E f = 1 MHz V = 10 V 25C T = 25C CE a 4 15 1 T = 85C a 3 40C 10 2 1 10 T = 85C a 25C 5 1 40C 2 10 0 0 1 2 10 1 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 Base-emitter voltage V (V) Collector current I (mA) Collector-base voltage V (V) BE C CB DMC204C0 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 1 2 10 1 10 10 Collector current I (mA) C Ver. CED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) T CE(sat) Total power dissipation P mW T Collector current I (mA) Collector current I (mA) C C Collector output capacitance C (pF) Forward current transfer ratio h ob FE (Common base, input open circuited)