DME50101 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For general amplication DME20101 in SMini5 type package Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: A2 Basic Part Number DSA2001 + DSC2001 (Common emitter) 1: Base (Tr1) 4: Collector (Tr2) 2: Emitter (Common) 5: Collector (Tr1) Packaging 3: Base (Tr2) DME501010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic SMini5-F3-B JEITA SC-113CB Absolute Maximum Ratings T = 25C a Code SOT-353 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 60 V (C1) (C2) CBO 5 4 Collector-emitter voltage (Base open) V 50 V CEO Tr1 Emitter-base voltage (Collector open) V 7 V EBO Tr1 Tr2 Collector current I 100 mA C Peak collector current I 200 mA CP 1 2 3 Collector-base voltage (Emitter open) V 60 V CBO (B1) (E) (B2) Collector-emitter voltage (Base open) V 50 V CEO Tr2 Emitter-base voltage (Collector open) V 7 V EBO Collector current I 100 mA C Peak collector current I 200 mA CP Total power dissipation P 150 mW T Junction temperature T 150 C j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Publication date: January 2014 Ver. CED 1DME50101 Electrical Characteristics T = 25C3C a Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.2 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 2 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.13 0.3 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 1.5 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart DME50101 PT-Ta P T T a 200 150 100 50 0 0 40 80 120 160 200 Ambient temperature T (C) a Ver. CED 2 Total power dissipation P (mW) T