DMG56401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits DMG26401 in SMini6 type package Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: E6 Basic Part Number DRC2114E + DRA2114E (Individual) 1: Emitter (Tr1) 4: Emitter (Tr2) Packaging 2: Base (Tr1) 5: Base (Tr2) DMG564010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 3: Collector (Tr2) 6: Collector (Tr1) Panasonic SMini6-F3-B Absolute Maximum Ratings T = 25C a JEITA SC-113DB Parameter Symbol Rating Unit Code SOT-363 Collector-base voltage (Emitter open) V 50 V CBO (C1) (B2) (E2) Tr1 Collector-emitter voltage (Base open) V 50 V CEO 6 5 4 Collector current I 100 mA C R 1 R 2 Tr1 Collector-base voltage (Emitter open) V 50 V CBO Tr2 Tr2 Collector-emitter voltage (Base open) V 50 V R CEO 2 R 1 Collector current I 100 mA C 1 2 3 (E1) (B1) (C2) Total power dissipation P 150 mW T R 10 k Junction temperature T 150 C 1 j Tr1 Overall R 10 k Resistance 2 Operating ambient temperature T 40 to +85 C opr value R 10 k 1 Storage temperature T 55 to +150 C Tr2 stg R 10 k 2 Publication date: November 2013 Ver. DED 1DMG56401 Electrical Characteristics T = 25C3C a Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.5 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 35 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 2.1 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.8 V I(off) CE C Input resistance R 30% 10 +30% k 1 Resistance ratio R / R 0.8 1.0 1.2 1 2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.5 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 35 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 2.1 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 A 0.8 V I(off) CE C Input resistance R 30% 10 +30% k 1 Resistance ratio R / R 0.8 1.0 1.2 1 2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ver. DED 2