DSA2002 Silicon PNP epitaxial planar type For general amplication Unit: mm Complementary to DSC2002 Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: A2 Packaging DSA20020L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 60 V 1: Base CBO 2: Emitter Collector-emitter voltage (Base open) V 50 V CEO 3: Collector Emitter-base voltage (Collector open) V 5 V EBO Panasonic Mini3-G3-B-B Collector current I 500 mA C JEITA SC-59A Peak collector current I 1 A Code TO-236AA/SOT-23 CP Collector power dissipation P 200 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E 2 * h V = 10 V, I = 150 mA 120 340 FE1 CE C 1 * Forward current transfer ratio h V = 10 V, I = 500 mA 40 FE2 CE C 1 * Collector-emitter saturation voltage V I = 300 mA, I = 30 mA 0.2 0.6 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 300 mA, I = 30 mA 0.9 1.5 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 130 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 7.3 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Code R S 0 Rank R S No-rank h 120 to 240 170 to 340 120 to 340 FE1 Marking Symbol A2R A2S A2 Product of no-rank is not classied and have no marking symbol for rank. Publication date: February 2014 Ver. DED 1DSA2002 DSA2002 IC-VCE DSA2002 hFE-IC DSA2002 PC-Ta P T I V h I C a C CE FE C 120 300 250 T = 25C a V = 10 V CE 100 250 T = 85C 200 a 80 200 I = 500 A B 150 25C 400 A 60 150 300 A 100 40C 40 100 200 A 50 20 100 A 50 0 0 0 2 3 0 2 4 6 8 10 12 1 10 10 10 0 40 80 120 160 200 Collector-emitter voltage V (V) Ambient temperature T (C) Collector current I (mA) CE a C DSA2002 VCEsat-IC DSA2002 IC-VBE DSA2002 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 600 25 I / I = 10 V = 10 V C B CE I = 0 E f =1 MHz 25C T = 25C 500 a 20 T = 85C a 1 400 15 300 40C 10 1 10 200 T = 85C a 5 40C 100 25C 2 10 0 0 2 3 2 1 10 10 10 0 0.4 0.8 1.2 1 10 10 Base-emitter voltage V (V) Collector current I (mA) Collector-base voltage V (V) BE C CB DSA2002 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. DED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) Collector power dissipation P (mW) T CE(sat) C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)