DSA9001 Silicon PNP epitaxial planar type For general amplication Unit: mm Complementary to DSC9001 DSA5001 in SSMini3 type package Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: A1 Packaging DSA90010L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a 1: Base Parameter Symbol Rating Unit 2: Emitter Collector-base voltage (Emitter open) V 60 V CBO 3: Collector Collector-emitter voltage (Base open) V 50 V Panasonic SSMini3-F3-B CEO JEITA SC-89 Emitter-base voltage (Collector open) V 7 V EBO Code SOT-490 Collector current I 100 mA C Peak collector current I 200 mA CP Collector power dissipation P 125 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 mA CEO CE B 1 * Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.2 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 2 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classication * Code R S 0 Rank R S No-rank h 210 to 340 290 to 460 210 to 460 FE Marking Symbol A1R A1S A1 Product of no-rank is not classied and have no marking symbol for rank. Publication date: February 2014 Ver. EED 1DSA9001 DSA9001 IC-VCE DSA9001 hFE-IC DSA9001 PC-Ta P T I V h I C a C CE FE C 120 600 150 T = 25C V = 10 V a CE I = 600 A B 100 500 125 500 A 80 400 100 T = 85C a 400 A 60 300 75 300 A 25C 40 200 50 200 A 40C 20 100 25 100 A 0 0 0 0 2 4 6 8 10 12 0.1 1 10 100 0 40 80 120 160 200 Collector-emitter voltage V (V) Ambient temperature T (C) Collector current I (mA) CE a C DSA9001 IC-VBE DSA9001 VCEsat-IC DSA9001 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 120 I / I = 10 C B I = 0 E V = 10 V CE 4.0 f = 1 MHz 25C 100 T = 25C a T = 85C a 1 80 3.0 40C 60 2.0 0.1 40 T = 85C a 1.0 40C 20 25C 0 0.01 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1 10 100 Base-emitter voltage V (V) Collector current I (mA) Collector-base voltage V (V) BE C CB DSA9001 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. EED 2 Collector-emitter saturation voltage V (V) Transition frequency f (MHz) ( ) CE(sat) Collector power dissipation P mW T C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)