DSC2501S0L Panasonic

DSC2501 Silicon NPN epitaxial planar type For low frequency amplication Unit: mm Features Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: E3 Packaging DSC25010L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 25 V CBO Collector-emitter voltage (Base open) V 20 V CEO Emitter-base voltage (Collector open) V 12 V EBO 1: Base Collector current I 0.5 A C 2: Emitter Peak collector current I 1 A CP 3: Collector Collector power dissipation P 200 mW C Panasonic Mini3-G3-B-B Junction temperature T 150 C JEITA SC-59A j Code TO-236AA/SOT-23 Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 25 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 20 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 12 V EBO E C Collector-base cutoff current (Emitter open) I V = 25 V, I = 0 100 nA CBO CB E 2 * Forward current transfer ratio h V = 2 V, I = 0.5 A 200 800 FE CE C 1 * Collector-emitter saturation voltage V I = 0.5 A, I = 20 mA 0.18 0.40 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 0.5 A, I = 50 mA 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 6 pF ob CB E (Common base, input open circuited) 3 * ON resistance R 1.0 on Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Code R S T 0 Rank R S T No-rank h 200 to 350 300 to 500 400 to 800 200 to 800 FE Marking Symbol E3R E3S E3T E3 Product of no-rank is not classied and have no marking symbol for rank. 3: R measurement circuit * 1 k on f = 1 kHz V = 0.3 V V V V B V A V B 1 000 R = () on V V A B Publication date: February 2014 Ver. BED 1DSC2501 DSC2501 PC-Ta DSC2501 IC-VCE DSC2501 hFE-IC P T I V h I C a C CE FE C 250 600 1 000 V = 2 V CE T = 25C a T = 85C I = 1.0 mA a B 0.8 mA 500 200 800 0.6 mA 25C 400 150 600 0.4 mA 40C 300 100 400 200 0.2 mA 50 200 100 0 0 0 2 3 0 40 80 120 160 200 0 1 2 3 4 5 6 1 10 10 10 Ambient temperature T (C) a Collector-emitter voltage V (V) Collector current I (mA) CE C DSC2501 VCEsat-IC DSC2501 IC-VBE DSC2501 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 500 14 I / I = 25 C B V = 2 V CE I = 0 E 12 f = 1 MHz 400 T = 25C a T = 85C a 10 25C 1 300 8 40C 6 200 1 10 T = 85C 4 a 100 40C 2 25C 2 10 0 0 2 3 1 10 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DSC2501 fT-IC DSC2501 VBEsat-IC f I V I T C BE(sat) C 10 250 I / I = 10 C B V = 10 V CE T = 25C a 200 40C 1 150 T = 85C a 25C 100 1 10 50 2 0 10 2 3 0.1 1 10 100 1 10 10 10 Collector current I (mA) Collector current I (mA) C C Ver. BED 2 Collector-emitter saturation voltage V (V) Transition frequency f (MHz) CE(sat) Collector power dissipation P (mW) T C Collector current I (mA) Collector current I (mA) Base-emitter saturation voltage V (V) C C BE(sat) Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)