DSC2A01S0L Panasonic

DSC2A01 Silicon NPN epitaxial planar type Unit: mm For low frequency amplication Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C8 Packaging DSC2A010L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a 1: Base Parameter Symbol Rating Unit 2: Emitter Collector-base voltage (Emitter open) V 50 V CBO 3: Collector Collector-emitter voltage (Base open) V 40 V Panasonic Mini3-G3-B CEO JEITA SC-59A Emitter-base voltage (Collector open) V 15 V EBO Code TO-236AA/SOT-23 Collector current I 50 mA C Peak collector current I 100 mA CP Collector power dissipation P 200 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 40 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 15 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 1 mA CEO CE B 1 * Forward current transfer ratio h V = 10 V, I = 2 mA 400 2 000 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.05 0.20 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classication * Code R S T Rank R S T h 400 to 800 600 to 1 200 1 000 to 2 000 FE Marking Symbol C8R C8S C8T Publication date: February 2014 Ver. BED 1DSC2A01 DSC2A01 hFE-IC DSC2A01 PC-Ta DSC2A01 IC-VCE P T I V h I C a C CE FE C 1 600 250 120 140 A T = 25C a 160 A 180 A V = 10 V CE 100 200 I = 200 A B 1 200 T = 85C a 120 A 80 100 A 150 25C 80 A 800 60 40C 60 A 100 40 40 A 400 50 20 A 20 0 0 0 1 2 10 1 10 10 0 40 80 120 160 200 0 2 4 6 8 10 12 ( ) Ambient temperature T C Collector current I (mA) a Collector-emitter voltage V (V) C CE DSC2A01 VCEsat-IC DSC2A01 Cob-VCB DSC2A01 IC-VBE V I I V C V CE(sat) C C BE ob CB 10 100 5 I / I = 10 I = 0 C B E V = 10 V CE f = 1 MHz T = 25C a 80 4 1 25C 60 3 T = 85C a 40 2 1 10 T = 85C 40C a 25C 20 1 40C 2 0 10 0 1 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 10 10 1 10 100 Base-emitter voltage V (V) Collector current I (mA) BE Collector-base voltage V (V) C CB DSC2A01 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. BED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Collector power dissipation P mW T CE(sat) C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)