DSC2G03 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplication Features High transition frequency f T Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C6 Packaging DSC2G030L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base Collector-base voltage (Emitter open) V 30 V CBO 2: Emitter Collector-emitter voltage (Base open) V 20 V CEO 3: Collector Emitter-base voltage (Collector open) V 3 V EBO Panasonic Mini3-G3-B JEITA SC-59A Collector current I 50 mA C Code TO-236AA/SOT-23 Collector power dissipation P 200 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 100 mA, I = 0 30 V CBO C E Emitter-base voltage (Collector open) V I = 10 mA, I = 0 3 V EBO E C Base-emitter voltage V V = 10 V, I = 2 mA 740 mV BE CE C Forward current transfer ratio h V = 10 V, I = 2 mA 25 250 FE CE C 1, 2 * Transition frequency f V = 10 V, I = 15 mA 800 1 600 MHz T CE C Reverse transfer capacitance C V = 10 V, I = 1 mA , f = 10.7 MHz 0.9 pF re CE C (Common emitter) Reverse transfer capacitance C V = 6 V, I = 0 , f = 1 MHz 0.7 pF rb CB C (Common base) Power gain PG V = 10 V, I = 1 mA , f = 200 MHz 20 dB CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Code T S 0 Rank T S No-rank f 800 to 1 400 1 000 to 1 600 800 to 1 600 T Marking Symbol C6T C6S C6 Product of no-rank is not classied and have no marking symbol for rank. Publication date: February 2014 Ver. BED 1DSC2G03 DSC2G03 IC-VCE DSC2G03 hFE-IC DSC2G03 PC-Ta P T I V h I C a C CE FE C 60 200 250 T = 25C a V = 10 V CE 700 A 600 A 50 T = 85C 800 A a 200 160 I = 900 A B 40 500 A 120 25C 150 400 A 30 300 A 40C 80 100 20 200 A 40 50 100 A 10 0 0 0 1 2 0 2 4 6 8 10 12 10 1 10 10 0 40 80 120 160 200 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DSC2G03 VCEsat-IC DSC2G03 IC-VBE DSC2G03 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 50 2.0 I / I = 10 I = 0 C B E V = 10 V f = 1 MHz CE T = 25C a 40 1.6 25C 1 30 1.2 T = 85C a 40C T = 85C 20 0.8 a 25C 1 10 40C 10 0.4 2 10 0 0 1 2 10 1 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DSC2G03 fT-IC f I T C 1 600 V = 10 V CE T = 25C a 1 200 800 400 0 1 2 10 1 10 10 Collector current I (mA) C Ver. BED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Collector power dissipation P mW T CE(sat) C Collector current I (mA) Collector current I (mA) C C Collector output capacitance C (pF) Forward current transfer ratio h ob FE (Common base, input open circuited)