DSC5001 Silicon NPN epitaxial planar type For general amplication Unit: mm Complementary to DSA5001 DSC2001 in SMini3 type package Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C1 Packaging DSC50010L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a 1: Base Parameter Symbol Rating Unit 2: Emitter Collector-base voltage (Emitter open) V 60 V CBO 3: Collector Panasonic SMini3-F2-B Collector-emitter voltage (Base open) V 50 V CEO JEITA SC-85 Emitter-base voltage (Collector open) V 7 V EBO Code Collector current I 100 mA C Peak collector current I 200 mA CP Collector power dissipation P 150 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 7 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 mA CEO CE B 1 * Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.13 0.3 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 1.5 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classication * Code R S 0 Rank R S No-rank h 210 to 340 290 to 460 210 to 460 FE Marking Symbol C1R C1S C1 Product of no-rank is not classied and have no marking symbol for rank. Publication date: March 2014 Ver. DED 1DSC5001 DSC5001 IC-VCE DSC5001 hFE-IC DSC5001 PC-Ta P T I V h I C a C CE FE C 120 600 250 T = 25C V = 10 V a CE 100 500 200 T = 85C a 80 400 I = 250 A B 150 200 A 25C 60 300 150 A 100 40C 40 200 100 A 50 20 100 50 A 0 0 0 0 2 4 6 8 10 12 0.1 1 10 100 0 40 80 120 160 200 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (mA) a CE C DSC5001 IC-VBE DSC5001 VCEsat-IC DSC5001 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 120 I / I = 10 C B V = 10 V CE 4.0 25C 100 T = 85C a 1 80 3.0 40C 60 2.0 0.1 40 T = 85C a 1.0 20 40C 25C 0 0.01 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1 10 100 Base-emitter voltage V (V) Collector current I (mA) Collector-base voltage V (V) BE C CB DSC5001 fT-IC f I T C 250 V = 10 V CE T = 25C a 200 150 100 50 0 0.1 1 10 100 Collector current I (mA) C Ver. DED 2 Collector-emitter saturation voltage V (V) Transition frequency f (MHz) Collector power dissipation P (mW) CE(sat) T C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)