BC807 16~BC80740 PNP GENERAL PURPOSE TRANSISTORS 45 Volt POWER 330 mWatt VOLTAGE FEATURES 0.120(3.04) General purpose amplifier applications 0.110(2.80) PNP epitaxial silicon, planar design Collector current I = 500mA C Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.056(1.40) Green molding compound as per IEC61249 Std 0.047(1.20) (Halogen Free) 0.079(2.00) 0.008(0.20) MECHANICAL DATA 0.003(0.08) 0.070(1.80) Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Apporx. Weight: 0.0003 ounce, 0.0084 gram 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) Device Marking : BC807-16 : 7A 0.020(0.50) BC807-25 : 7B 0.013(0.35) BC807-40 : 7C MECHANICAL DATA PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage V -45 V CEO Collector-Base Voltage V -50 V CBO Emitter-Base Voltage V -5 V EBO Collector Current - Continuous I -500 mA C Peak Collector Current I -1000 mA CM Total Power Dissipation (Note 1) P 330 mW TOT o Junction and Storage Temperature Range T , T -55 to 150 C J STG THERMAL CHARACTERISTICS PARAMETER SYMBOL Value UNIT o Thermal Resistance Junction to Ambient (Note 1) R 375 C/W JA o Thermal Resistance Junction to Lead R 220 C/W JL NOTES : 1. Transistor mounted on FR-5 board mini mum pad mounting conditions. February 24,2017-REV.05 PAGE . 1 0.006(0.15)MIN.BC80 716~BC80740 o ELECTRICAL CHARACTERISTICS(TJ=25 C,unless otherwise notes) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage (I =-10mA, I =0) V CEO -45 - - V C B (BR) Collector-Base Breakdown Voltage (V =0V, I =-10A) V CBO -50 - - V EB C (BR) Emitter-Base Breakdown Voltage (I =-1A,Ic=0) V EBO -5.0 - - V E (BR) Emitter-Base Cutoff Current (V =-5V) I - - -100 nA EB EBO O Collector-Base Cutoff Current (V =-20V,I =0) T =25 C -100 nA CB E J - I - CBO - O A -5.0 T =150 C J DC Current Gain BC807-16 100 - 250 (Ic=-100mA,V =-1V) BC807-25 160 - 400 CE BC807-40 250 - 600 h - FE (Ic=-500mA,V =-1V) 40 - - CE Collector-Emitter Saturation Voltage (Ic=-500mA ,I =-50mA) V -- -0.7 V B CE(SAT) Base-Emitte Voltage (Ic=-500mA,V =-1.0V) V -- -1.2 V CE BE(ON) Collector-Base Capacitance (V =-10v,I =0,f=1MHz) C -7.0 - pF CB E CBO Current Gain-Bandwidth Product (Ic=-10mA,V =-5V,f=100MHz) f 100 - - MHz CE T ELECTRICAL CHARACTERISTICS 1000 1000 O TC= 150 J O TC= 150 J O TC=25 J 100 O 100 TC=25 O J TC= 100 J O TC= 100 J V =1V V =1V CE CE 10 10 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Collector Current,I()mA Collector Current,I()mA C C Fig.1. BC807-16 Typical h vs. I Fig.2. BC807-25 Typical h vs. I FE C FE C 1000 o 100 TC=150 J C()EB IB o TC=25 J o TC=100 100 J 10 C ()EB OB V =1V CE 10 1 0.01 0.1 1 10 100 1000 0.1 1 10 100 CollectorCurrent,I()mA C Reverse Voltage, V ()V R Fig. 3 BC807-40 Typical h vs. I Fig.4 Typical Capacitances FE C February 24,2017-REV.05 PAGE . 2 hFE hFE hFE Capacitance,(C p F) J