X-On Electronics has gained recognition as a prominent supplier of BC817-16-AU_R2_000A1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-16-AU_R2_000A1 Bipolar Transistors - BJT are a product manufactured by Panjit. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC817-16-AU_R2_000A1 Panjit

BC817-16-AU_R2_000A1 electronic component of Panjit
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Part No.BC817-16-AU_R2_000A1
Manufacturer: Panjit
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT /8A/TR/13"/HF/12K/SOT-23/TRA/SOT/GPT-03TN/GPT03-QI40/PJ///
Datasheet: BC817-16-AU_R2_000A1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1656 ea
Line Total: USD 0.17 
Availability - 4242
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4242
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1656
10 : USD 0.1115
100 : USD 0.0713
1000 : USD 0.0322
2500 : USD 0.0287
12000 : USD 0.023
24000 : USD 0.0207
48000 : USD 0.0207
96000 : USD 0.0184

   
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We are delighted to provide the BC817-16-AU_R2_000A1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-16-AU_R2_000A1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit: inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Standard PNP complement: BC807-AU series Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084grams Marking: BC817-16-AU: 8A BC817-25-AU: 8B BC817-40-AU: 8C o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 5 V EBO Collector Current (DC) I 500 mA C Collector Current (Pulse) I 1000 mA CP Total Power Dissipation PTOT 330 mW o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG (Note ) o Thermal Resistance from Junction to Ambient R 375 C/W JA Note: Mounted on minimum pad mount on FR-4 board. March 8,2019-REV.04 Page 1 PBC817-16-AU / BC817-25-AU / BC817-40-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS OFF Characteristics Collector-Emitter Breakdown Voltage BV I = 10mA, I = 0A 45 - - V CEO C B Collector-Base Breakdown Voltage BV I = 10uA, I = 0A 50 - - V CBO C E Emitter-Base Breakdown Voltage BV I = 1uA, I = 0A 5 - - V EBO E C Collector-Base Cutoff Current I V = 20V, I = 0A - - 100 nA CBO CB E o Collector-Base Cutoff Current I Tj=125 C - - 5 uA CBO Emitter-Base Cutoff Current I V = 5V - - 100 nA EBO EB ON characteristics BC817-16-AU 100 - 250 DC Current Gain BC817-25-AU V = 1V I = 100mA 160 - 400 CE C h FE BC817-40-AU 250 - 600 DC Current Gain V = 1V I = 500mA 40 - - CE C Collector-Emitter Saturation Voltage V I = 500mA, I = 50mA - - 0.7 V CE(SAT) C B Base-Emitter Turn-on voltage V I = 500mA, V = 1V - - 1.2 V BE(on) C CE Transition Frequency f I = 10mA, V = 5V 100 - - MHz T C CE Collector Output Capacitance C V = 10V, f=1MHz - 7 - pF OB CB March 8,2019-REV.04 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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