BC817-40-AU_R1_000A1 Panjit

PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit: inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Standard PNP complement: BC807-AU series Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084grams Marking: BC817-16-AU: 8A BC817-25-AU: 8B BC817-40-AU: 8C o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 5 V EBO Collector Current (DC) I 500 mA C Collector Current (Pulse) I 1000 mA CP Total Power Dissipation PTOT 330 mW o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG (Note ) o Thermal Resistance from Junction to Ambient R 375 C/W JA Note: Mounted on minimum pad mount on FR-4 board. March 8,2019-REV.04 Page 1 PBC817-16-AU / BC817-25-AU / BC817-40-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS OFF Characteristics Collector-Emitter Breakdown Voltage BV I = 10mA, I = 0A 45 - - V CEO C B Collector-Base Breakdown Voltage BV I = 10uA, I = 0A 50 - - V CBO C E Emitter-Base Breakdown Voltage BV I = 1uA, I = 0A 5 - - V EBO E C Collector-Base Cutoff Current I V = 20V, I = 0A - - 100 nA CBO CB E o Collector-Base Cutoff Current I Tj=125 C - - 5 uA CBO Emitter-Base Cutoff Current I V = 5V - - 100 nA EBO EB ON characteristics BC817-16-AU 100 - 250 DC Current Gain BC817-25-AU V = 1V I = 100mA 160 - 400 CE C h FE BC817-40-AU 250 - 600 DC Current Gain V = 1V I = 500mA 40 - - CE C Collector-Emitter Saturation Voltage V I = 500mA, I = 50mA - - 0.7 V CE(SAT) C B Base-Emitter Turn-on voltage V I = 500mA, V = 1V - - 1.2 V BE(on) C CE Transition Frequency f I = 10mA, V = 5V 100 - - MHz T C CE Collector Output Capacitance C V = 10V, f=1MHz - 7 - pF OB CB March 8,2019-REV.04 Page 2