X-On Electronics has gained recognition as a prominent supplier of MMBT3904FN3_R1_00001 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3904FN3_R1_00001 Bipolar Transistors - BJT are a product manufactured by Panjit. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3904FN3_R1_00001 Panjit

MMBT3904FN3_R1_00001 electronic component of Panjit
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Part No.MMBT3904FN3_R1_00001
Manufacturer: Panjit
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT /AC/TR/7"/HF/8K/DFN 3L/TRA/DFN/GPT-03FNN/GPT03-QI85/PJ///
Datasheet: MMBT3904FN3_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1461 ea
Line Total: USD 0.15 
Availability - 14445
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14445
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1461
10 : USD 0.1012
100 : USD 0.0517
1000 : USD 0.0437
2500 : USD 0.0414
8000 : USD 0.0333
24000 : USD 0.0311
48000 : USD 0.0299
96000 : USD 0.0276

   
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We are delighted to provide the MMBT3904FN3_R1_00001 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3904FN3_R1_00001 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unitinch(mm) DFN 3L POWER VOLTAGE 40 Volt 250 mWatt 0.042(1.05) FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA 0.002(0.05)MAX. Case: DFN 3L, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 0.013(0.32) 0.014(0.36) 0.013(0.32) 0.009(0.22) 0.009(0.22) Approx. Weight: 0.00004 ounces, 0.0011 grams Marking: AC 0.008(0.20) 0.004(0.10) 22 33 11 ABSOLUTE RATINGS Parameter Symbol Value Units Collector - Emitter Voltage VCEO 40 V Collector - Base Voltage VCBO 60 V Emitter - Base Voltage VEBO 6.0 V Collector Current - Continuous I C 200 mA THERMAL CHARACTERISTICS Parameter Symbol Value Units Max Power Dissipation (Note 1) PTOT 250 mW O Thermal Resistance , Junction to Ambient RJA 500 C/W O Junction Temperature TJ -55 to +150 C O Operating Temperature TSTG -55 to +150 C Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE September 25,2017-REV.04 PAGE . 1 0.022(0.55) 0.022(0.55) 0.026(0.65) 0.017(0.45) 0.017(0.45) 0.022(0.55) 0.014(0.36) 0.008(0.20) 0.004(0.10)MMBT3904FN3 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition MIN. TYP. MAX. Units Collector - Emitter Breakdown Voltage V(BR)CEO IC=1.0mA, IB=0 40 - - V Collector - Base Breakdown Voltage V (BR)CBO IC=10uA, IE=0 60 - - V Emitter - Base Breakdown Voltage V (BR)EBO IE=10uA, IC=0 6.0 - - V Base Cutoff Current IBL VCE=30V, VEB=3.0V - - 50 nA Collector Cutoff Current ICEX VCE=30V, VEB=3.0V - - 50 nA IC=0.1mA, V CE=1.0V 40 - - IC=1.0mA, V CE=1.0V 70 - - DC Current Gain (Note 2) h IC=10mA, VCE=1.0V 100 - 300 - FE IC=50mA, VCE=1.0V 60 - - IC=100mA, VCE=1.0V 30 - - Collector - Emitter Saturation Voltage IC=10mA, IB =1.0mA 0.2 VCE(SAT) -- V (Note 2) IC=50mA, IB =5.0mA 0.3 IC=10mA, IB =1.0mA 0.65 - 0.85 Base - Emitter Saturation Voltage (Note 2) VBE(SAT) V IC=50mA, IB =5.0mA - - 0.95 Collector - Base Capacitance C CBO VCB=5V, IE=0, f=1MHz - - 4.0 pF VEB=0.5V, IC=0, Emitter - Base Capacitance C EBO -- 8.0 pF f=1MHz VCC=3V,VBE=0.5V, Delay Time td -- 35 ns IC=10mA,IB=1.0mA VCC=3V,VBE=0.5V, Rise Time tr -- 35 ns IC=10mA,IB=1.0mA VCC=3V,IC=10mA Storage Time ts -- 200 ns IB1=IB2=1.0mA VCC=3V,IC=10mA Fall Time tf -- 50 ns . IB1=IB2=1.0mA Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +3V 275 300ns Duty Cycle ~ 2.0% +10.9V 0 C * < 4pF -0.5V S 10K < 1ns D elay and R ise T im e Equivalent Test C ircuit +3V +3V 272755 10 t10 to 500o 500usus DuDuttyy Cy Cyccllee ~ ~ 2 2..00%% ++110.0.9V9V 00 C * < 4pF C * < 4pF SS 10K 10K -9-9..11VV << 1ns 1ns 1N1N916916 Storage and Fall Tim e Equivalent Test Circuit September 25,2017-REV.04 PAGE . 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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