MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unitinch(mm) DFN 3L POWER VOLTAGE 40 Volt 250 mWatt 0.042(1.05) FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA 0.002(0.05)MAX. Case: DFN 3L, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 0.013(0.32) 0.014(0.36) 0.013(0.32) 0.009(0.22) 0.009(0.22) Approx. Weight: 0.00004 ounces, 0.0011 grams Marking: AC 0.008(0.20) 0.004(0.10) 22 33 11 ABSOLUTE RATINGS Parameter Symbol Value Units Collector - Emitter Voltage VCEO 40 V Collector - Base Voltage VCBO 60 V Emitter - Base Voltage VEBO 6.0 V Collector Current - Continuous I C 200 mA THERMAL CHARACTERISTICS Parameter Symbol Value Units Max Power Dissipation (Note 1) PTOT 250 mW O Thermal Resistance , Junction to Ambient RJA 500 C/W O Junction Temperature TJ -55 to +150 C O Operating Temperature TSTG -55 to +150 C Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE September 25,2017-REV.04 PAGE . 1 0.022(0.55) 0.022(0.55) 0.026(0.65) 0.017(0.45) 0.017(0.45) 0.022(0.55) 0.014(0.36) 0.008(0.20) 0.004(0.10)MMBT3904FN3 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition MIN. TYP. MAX. Units Collector - Emitter Breakdown Voltage V(BR)CEO IC=1.0mA, IB=0 40 - - V Collector - Base Breakdown Voltage V (BR)CBO IC=10uA, IE=0 60 - - V Emitter - Base Breakdown Voltage V (BR)EBO IE=10uA, IC=0 6.0 - - V Base Cutoff Current IBL VCE=30V, VEB=3.0V - - 50 nA Collector Cutoff Current ICEX VCE=30V, VEB=3.0V - - 50 nA IC=0.1mA, V CE=1.0V 40 - - IC=1.0mA, V CE=1.0V 70 - - DC Current Gain (Note 2) h IC=10mA, VCE=1.0V 100 - 300 - FE IC=50mA, VCE=1.0V 60 - - IC=100mA, VCE=1.0V 30 - - Collector - Emitter Saturation Voltage IC=10mA, IB =1.0mA 0.2 VCE(SAT) -- V (Note 2) IC=50mA, IB =5.0mA 0.3 IC=10mA, IB =1.0mA 0.65 - 0.85 Base - Emitter Saturation Voltage (Note 2) VBE(SAT) V IC=50mA, IB =5.0mA - - 0.95 Collector - Base Capacitance C CBO VCB=5V, IE=0, f=1MHz - - 4.0 pF VEB=0.5V, IC=0, Emitter - Base Capacitance C EBO -- 8.0 pF f=1MHz VCC=3V,VBE=0.5V, Delay Time td -- 35 ns IC=10mA,IB=1.0mA VCC=3V,VBE=0.5V, Rise Time tr -- 35 ns IC=10mA,IB=1.0mA VCC=3V,IC=10mA Storage Time ts -- 200 ns IB1=IB2=1.0mA VCC=3V,IC=10mA Fall Time tf -- 50 ns . IB1=IB2=1.0mA Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +3V 275 300ns Duty Cycle ~ 2.0% +10.9V 0 C * < 4pF -0.5V S 10K < 1ns D elay and R ise T im e Equivalent Test C ircuit +3V +3V 272755 10 t10 to 500o 500usus DuDuttyy Cy Cyccllee ~ ~ 2 2..00%% ++110.0.9V9V 00 C * < 4pF C * < 4pF SS 10K 10K -9-9..11VV << 1ns 1ns 1N1N916916 Storage and Fall Tim e Equivalent Test Circuit September 25,2017-REV.04 PAGE . 2