Preliminary Datasheet 2SA1121 R07DS0271EJ0400 Rev.4.00 Silicon PNP Epitaxial Jan 10, 2014 Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage V 35 V CBO Collector to emitter voltage V 35 V CEO Emitter to base voltage V 4 V EBO Collector current I 500 mA C Collector power dissipation P 150 mW C Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C R07DS0271EJ0400 Rev.4.00 Page 1 of 5 Jan 10, 2014 2SA1121 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Collector to base breakdown voltage V 35 V I = 10 A, I = 0 (BR)CBO C E Collector to emitter breakdown voltage V 35 V I = 1 mA, R = (BR)CEO C BE Emitter to base breakdown voltage V 4 V I = 10 A, I = 0 (BR)EBO E C Collector cutoff current I 0.5 A V = 20 V, I = 0 CBO CB E Collector to emitter saturation voltage V 0.2 0.6 V I = 150 mA, I = 15 mA CE(sat) C B 1 DC current transfer ratio h * 100 320 V = 3 V, I = 10 mA FE CE C h 10 V = 3 V, I = 500 mA FE CE C (Pulse test) Base to emitter voltage V 0.64 V V = 3 V, I = 10 mA BE CE C Note: 1. The 2SA1121 is grouped by h as follows. FE Grade C D Mark SC SD h 100 to 200 160 to 320 FE R07DS0271EJ0400 Rev.4.00 Page 2 of 5 Jan 10, 2014