X-On Electronics has gained recognition as a prominent supplier of 2SC2618RCTL-E bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SC2618RCTL-E bipolar transistors - bjt are a product manufactured by Renesas. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SC2618RCTL-E Renesas

2SC2618RCTL-E electronic component of Renesas
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See Product Specifications
Part No.2SC2618RCTL-E
Manufacturer: Renesas
Category:Bipolar Transistors - BJT
Description: Trans GP BJT NPN 35V 0.5A 3-Pin MPAK T/R
Datasheet: 2SC2618RCTL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

524: USD 0.0651 ea
Line Total: USD 34.11

Availability - 0
MOQ: 524  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 524
Multiples : 1
524 : USD 0.0651
1000 : USD 0.0629
2000 : USD 0.0556

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Packaging
Brand
Deleted
Collector Current Dc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Operating Temperature Classification
Category
Rad Hardened
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We are delighted to provide the 2SC2618RCTL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC2618RCTL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

Preliminary Datasheet 2SC2618 R07DS0273EJ0400 Rev.4.00 Silicon NPN Epitaxial Jan 10, 2014 Application Low frequency amplifier Complementary pair with 2SA1121 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage V 35 V CBO Collector to emitter voltage V 35 V CEO Emitter to base voltage V 4 V EBO Collector current I 500 mA C Collector power dissipation P 150 mW C Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C R07DS0273EJ0400 Rev.4.00 Page 1 of 5 Jan 10, 2014 2SC2618 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ MaxUnitTest conditions Collector to base breakdown voltage V 35 V I = 10 A, I = 0 (BR)CBO C E Collector to emitter breakdown voltage V 35 V I = 1 mA, R = (BR)CEO C BE Emitter to base breakdown voltage V 4 V I = 10 A, I = 0 (BR)EBO E C Collector cutoff current I 0.5 A V = 20 V, I = 0 CBO CB C 1 DC current transfer ratio h * 100 320 V = 3 V, I = 10 mA FE1 CE C (Pulse test) h 10 V = 3 V, I = 500 mA FE2 CE C (Pulse test) Collector to emitter saturation voltage V 0.2 0.6 V I = 150 mA, I = 15 mA CE(sat) C B (Pulse test) Base to emitter voltage V 0.64 V V = 3 V, I = 10 mA BE CE C (Pulse test) Note: 1. The 2SC2618 is grouped by h as follows. FE1 Grade C D Mark RC RD h 100 to 200 160 to 320 FE1 R07DS0273EJ0400 Rev.4.00 Page 2 of 5 Jan 10, 2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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