Product Information

HFA3096BZ

HFA3096BZ electronic component of Renesas

Datasheet
Transistors Bipolar - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 13.57 ea
Line Total: USD 13.57

2142 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2123 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

HFA3096BZ
Renesas

1 : USD 8.234
10 : USD 8.05
25 : USD 7.981
100 : USD 7.981
250 : USD 7.912
480 : USD 7.82
960 : USD 7.3485
5280 : USD 7.3485

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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DATASHEET HFA3046, HFA3096, HFA3127, HFA3128 FN3076 Rev.16.00 Ultra High Frequency Transistor Arrays Jan 24, 2019 The HFA3046, HFA3096, HFA3127 and the HFA3128 are Features ultra high frequency transistor arrays that are fabricated from NPN transistor (f ) 8GHz T the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a NPN current gain (h ) 130 FE common monolithic substrate. The NPN transistors exhibit a NPN early voltage (V ) 50V A f of 8GHz while the PNP transistors provide a f of 5.5GHz. T T PNP transistor (f ) . 5.5GHz Both types exhibit low noise (3.5dB), making them ideal for T high frequency amplifier and mixer applications. PNP current gain (h ) . 60 FE The HFA3046 and HFA3127 are all NPN arrays while the PNP early voltage (V ) .20V A HFA3128 has all PNP transistors. The HFA3096 is an Noise figure (50) at 1.0GHz 3.5dB NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum Collector to collector leakage .<1pA application flexibility. Monolithic construction of these Complete isolation between transistors transistor arrays provides close electrical and thermal Pin compatible with industry standard 3XXX series arrays matching of the five transistors. Pb-free (RoHS compliant) Application note AN9315 illustrates the use of these devices as RF amplifiers. Applications Related Literature VHF/UHF amplifiers For a full list of related documents, visit our website: VHF/UHF mixers HFA3046, HFA3096, HFA3127, HFA3128 device pages IF converters Synchronous detectors FN3076 Rev.16.00 Page 1 of 16 Jan 24, 2019HFA3046, HFA3096, HFA3127, HFA3128 Ordering Information PART NUMBER PART TEMP. RANGE TAPE AND REEL PACKAGE PKG. (Notes 2, 3) MARKING (C) (UNITS) (Note 1) (RoHS Compliant) DWG. HFA3046BZ HFA3046BZ -55 to +125 - 14 Ld SOIC M14.15 HFA3096BZ HFA3096BZ -55 to +125 - 16 Ld SOIC M16.15 HFA3096BZ96 HFA3096BZ -55 to +125 2.5k 16 Ld SOIC M16.15 HFA3127BZ HFA3127BZ -55 to +125 - 16 Ld SOIC M16.15 HFA3127BZ96 HFA3127BZ -55 to +125 2.5k 16 Ld SOIC M16.15 HFA3127RZ 127Z -55 to +125 - 16 Ld 3x3 QFN L16.3x3 HFA3127RZ96 127Z -55 to +125 6k 16 Ld 3x3 QFN L16.3x3 HFA3128BZ (No longer available or supported) HFA3128BZ -55 to +125 - 16 Ld SOIC M16.15 HFA3128RZ (No longer available or supported) 128Z -55 to +125 - 16 Ld 3x3 QFN L16.3x3 NOTE: 1. See TB347 for details about reel specifications. 2. These Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), see the HFA3046, HFA3096, HFA3127, or HFA3128 device page. For more information about MSL, see TB363. FN3076 Rev.16.00 Page 2 of 16 Jan 24, 2019

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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