X-On Electronics has gained recognition as a prominent supplier of 2SA2007E bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SA2007E bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SA2007E ROHM

2SA2007E electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SA2007E
Manufacturer: ROHM
Category:Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Trans GP BJT PNP 60V 12A
Datasheet: 2SA2007E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 500
Multiples : 500
500 : USD 1.2015
1000 : USD 1.1125
1500 : USD 1.1125
2000 : USD 1.1125
2500 : USD 1.1125
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 2.5035
10 : USD 2.195
100 : USD 1.8035
250 : USD 1.756
500 : USD 1.5069
1000 : USD 1.3051
2500 : USD 1.3051
5000 : USD 1.2814
10000 : USD 1.2577
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SA2007E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2007E and other electronic components in the Bipolar Transistors - BJT category and beyond.

2SA2007 Transistors High-speed Switching Transistor (60V,12A) 2SA2007 External dimensions (Units : mm) Features 1) High switching speed. 10.0 4.5 (Typ. tf 0.15 s at Ic 6A) = = 3.2 2.8 2) Low saturation voltage. (Typ. VCE(sat) = 0.2V at IC / IB = 6A / 0.3A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SC5526. 0.8 ( ) (1) Base Gate 2.54 2.54 0.75 2.6 (1) (2) (3) (2) Collector(Drain) (3) Emitter(Source) (1) (2) (3) ROHM : TO-220FN Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V 12 A Collector current IC 20 A(Pulse) 2 W PC Collectorpowerdissipation 25 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Packaging specifications and hFE Type 2SA2007 Package TO-220FN hFE F Code Basic ordering unit (pieces) 500 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 100 V IC = 50 A BVCEO 60 V Collector-emitter breakdown voltage IC = 1mA BVEBO 5 V Emitter-base breakdown voltage IE = 50 A Collector cutoff current ICBO 10 A VCB = 100V Emitter cutoff current IEBO 10 A VEB = 5V 0.3 V IC/IB = 6A/0.3A VCE(sat) Collector-emitter saturation voltage 0.5 V IC/IB = 8A/0.4A 1.2 V IC/IB = 6A/0.3A Base-emitter saturation voltage VBE(sat) 1.5 V IC/IB = 8A/0.4A DC current transfer ratio hFE 160 320 VCE = 2V , IC = 2A fT MHz Transition frequency 80 VCE = 10V , IE = 1A , f = 30MHz pF Output capacitance Cob VCB = 10V , IE = 0A , f = 1MHz 250 s Turn-on time ton 0.3 IC = 6A , RL = 5 tstg 1.5 sIB1 = IB2 = 0.3A Storage time Fall time tf 0.3 s VCC 30V 14.0 15.0 12.0 5.0 8.0X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by ROHM manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H BC546/116 BC557/116 BSW67A NTE158 NTE187A NTE195A NTE2302 NTE2330 NTE63 C4460 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA2126-E 2SB1204S-TL-E 2SC5488A-TL-H 2SD2150T100R SP000011176 FMMTA92QTA 2N2369ADCSM 2SC2412KT146S 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E US6T6TR 732314D CMXT3906 TR CPH3121-TL-E CPH6021-TL-H 873787E IMZ2AT108 UMX21NTR EMT2T2R MCH6102-TL-E FP204-TL-E NJL0302DG 2N3583 2SA1434-TB-E 2SC3143-4-TB-E 2SD1621S-TD-E NTE103 30A02MH-TL-E NSV40301MZ4T1G NTE101 NTE13 NTE15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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