2SAR523UBTL ROHM

2SAR523UBTL electronic component of ROHM
2SAR523UBTL ROHM
2SAR523UBTL Bipolar Transistors - BJT
2SAR523UBTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SAR523UBTL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SAR523UBTL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SAR523UBTL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT GP Amplification Trans
Datasheet: 2SAR523UBTL Datasheet (PDF)
Price (USD)
3803: USD 0.0684 ea
Line Total: USD 260.13 
Availability : 6486
  
Ship by Mon. 17 Nov to Fri. 21 Nov
QtyUnit Price
3803$ 0.0684
3914$ 0.0664
5000$ 0.0646

Availability 7595
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 2193
Multiples : 1
QtyUnit Price
2193$ 0.1352
3082$ 0.0844
6000$ 0.0686


Availability 6486
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 3803
Multiples : 1
QtyUnit Price
3803$ 0.0684
3914$ 0.0664
5000$ 0.0646

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SAR523UBTL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SAR523UBTL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SAR523M / 2SAR523EB / 2SAR523UB PNP -100mA -50V General Purpose Transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -50V CEO I -100mA C 2SAR523M 2SAR523EB (VMT3) (EMT3F) SOT-323FL 2SAR523UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary NPN Types: 2SCR523M (VMT3) / 2SCR523EB (EMT3F) / 2SCR523UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SAR523M 1212 T2L 180 8 8000 PB (VMT3) SOT-416FL 2SAR523EB 1616 TL 180 8 3000 PB (EMT3F) SOT-323FL 2SAR523UB 2021 TL 180 8 3000 PB (UMT3F) www.rohm.com 1 / 8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SAR523M / 2SAR523EB / 2SAR523UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO Collector-emitter voltage V -50 V CEO V Emitter-base voltage -5 V EBO I -100 mA C Collector current *1 I -200 mA CP 2SAR523M 150 *2 P Power dissipation 2SAR523EB 150 mW D 2SAR523UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -50V - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - -150 -400 mV CE(sat) C B h DC current gain V = -6V, I = -1mA 120 - 560 - FE CE C V = -10V, I = 10mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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