2SAR553P5T100 ROHM

2SAR553P5 Datasheet Midium Power Transistors (-50V / -2A) llOutline SOT-89 Parameter Value SC-62 V -50V CEO I -2A C MPT3 llFeatures llInner circuit 1) Low saturation voltage, typically V = -0.4V (Max.) (I / I = -700mA / -35mA) CE(sat) C B 2) High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SAR553P5 4540 T100 180 12 1000 MG (MPT3) www.rohm.com 1/6 20150730 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.2SAR553P5 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I -2 A C Collector current *1 I -4 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E Collector cut-off current I V = -50V - - -1.0 A CBO CB I Emitter cut-off current V = -4V - - -1.0 A EBO EB *4 Collector-emitter saturation voltage I = -700mA, I = -35mA - -200 -400 mV V C B CE(sat) DC current gain h V = -2V, I = -50mA 180 - 450 - FE CE C V = -10V, I = 300mA, CE E *4 Transition frequency - 320 - MHz f T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 22 - pF ob f = 1MHz I = -1A, C t Turn-On time - 45 - ns on I = -100mA, B1 I = 100mA, B2 t Storage time - 220 - ns stg V -10V, CC R = 10 L Fall time t - 35 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20150730 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.