X-On Electronics has gained recognition as a prominent supplier of 2SB1424T100Q BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1424T100Q BIPOLAR TRANSISTORS - BJT are a product manufactured by ROHM. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

2SB1424T100Q ROHM

2SB1424T100Q electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SB1424T100Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 20V 3A SO-89
Datasheet: 2SB1424T100Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2136 ea
Line Total: USD 0.21

Availability - 101
Ships to you between
Fri. 28 Jun to Wed. 03 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
101 - WHS 1


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 1
Multiples : 1
1 : USD 0.2136
10 : USD 0.174
30 : USD 0.1572
100 : USD 0.1361
500 : USD 0.1266
1000 : USD 0.1006

325 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.4865
100 : USD 0.4542
500 : USD 0.2772
1000 : USD 0.1897
2000 : USD 0.1656
10000 : USD 0.1644
25000 : USD 0.1598
50000 : USD 0.1564

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SB1424T100Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1424T100Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (20V, 3A) 2SB1424 / 2SA1585S z External dimensions (Unit : mm) z Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = 0.2V (Typ.) 40.2 20.2 +0.2 4.5 (IC/IB = 2A / 0.1A) 0.1 1.50.1 1.60.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. +0.15 0.45 (1) (2) (3) 0.05 +0.1 0.4 0.05 0.40.1 0.50.1 0.40.1 1.50.1 1.50.1 +0.4 +0.15 z Structure 2.5 0.45 3.00.2 0.1 0.5 0.05 5 Epitaxial planar type PNP silicon transistor (1) Base (1) (2) (3) ROHM : MPT3 (2) Collector (1) Emitter EIAJ : SC-62 (3) Emitter ROHM : SPT (2) Collector EIAJ : SC-72 (3) Base Abbreviated symbol: AE Denotes hFE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V 2SB1424 3 IC A Collector current 2SA1585S 2 ICP 5 A(Pulse) 0.5 2SB1424 Collector power PC W dissipation 2SA1585S 0.4 Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Single pulse Pw=10ms Rev.A 1/3 4.00.3 +0.2 2.5 1.00.2 0.1 0.50.1 (15Min.) 30.2 3Min.2SB1424 / 2SA1585S Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 20 VIC= 50A Collector-emitter breakdown voltage BVCEO 20 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 50A Collector cutoff current ICBO 0.1 A VCB= 20V Emitter cutoff current IEBO 0.1 A VEB= 5V Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB= 2A/ 0.1A DC current transfer ratio hFE 120 390 VCE= 2V, IC= 0.1A Transition frequency fT 240 MHz VCE= 2V, IE=0.5A, f=100MHz Output capacitance Cob 35 pF VCB= 10V, IE=0A, f=1MHz z Packaging specifications and hFE hFE values are classified as follows : Package Taping Item Q R Code TP T100 hFE 120 to 270 180 to 390 Basic ordering 5000 1000 Type hFE unit (pieces) 2SA1585S QR 2SB1424 QR z Electrical characteristic curves 2.0 5 10 Ta=25C VCE= 2V Ta=25C 20mA 5 50mA 18mA 45mA 2 12mA 1.6 4 Ta=100C 1 10mA 0.5 25C 1.2 8mA 3 0.2 40C 0.1 6mA 0.05 0.8 2 4mA 0.02 0.01 2mA 5mA 0.4 1 5m 2m I =0A IB=0A 0 B 1m 0 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : V (V) BASE TO EMITTER VOLTAGE : VBE (V) CE COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output characteristics characteristics ( ) characteristics ( ) Rev.A 2/3 15mA 25mA 10mA 35mA 20mA 30mA 14mA 40mA 16mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : I (A) C COLLECTOR CURRENT : IC (A)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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