2SB1705TL ROHM

0~0.1 2SB1705 Transistors Low frequency amplifier 2SB1705 z External dimensions (Unit : mm) z Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) z Features 1) A collector current is large. (1) (2) 2) VCE(sat) 250mV 0.95 0.95 0.16 At IC=1.5A / IB=30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector z Equivalent circuit z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (3) Collector-base voltage VCBO 15 V VCEO 12 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 3 A Collector current 1 ICP 6 A 2 PC 500 mW Power dissipation (1) (2) Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1Single pulse, PW=1ms 2Each Termminal Mounted on a Recommended z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 V IC= 10A BVCEO 12 V IC= 1mA Collector-emitter breakdown voltage Emitter-base breakdown voltage BVEBO 6 V IE= 10A ICBO 100 nA VCB= 15V Collector cutoff current IEBO 100 nA VEB= 6V Emitter cutoff current Collector-emitter saturation voltage VCE(sat) 120 250 mV IC= 1.5A, IB= 30mA hFE 270 680 VCE= 2V, IC= 500mA DC current gain Transition frequency fT 280 MHz VCE= 2V, IE=500mA, f=100MHz VCB= 10V, IE=0A, f=1MHz Collector output capacitance Cob 30 pF Pulsed 20190527-Rev.D1/2 1.6 2.8 0.3~0.62SB1705 Transistors z Packaging specifications Package Taping Type Code TL Quantity (pcs) 3000 2SB1705 z Electrical characteristic curves 1000 1 10 125C 25C 125C 40C 0.1 25C 25C 100 1 40C 40C 0.01 125C VCE=2V IC/IB=20/1 IC/IB=20/1 Pulsed Pulsed Pulsed 10 0.001 0.1 0.001 0.01 0.1 110 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage Fig.3 Baseemitter saturation voltage Fig1. DC current gain vs. collector current vs.collector current vs. collector current 10 1000 1000 Ta=25C IC=0A VCE=2V f=1MHz f=100MHz Ta=25C Cib 1 Cob 25C 0.1 100 100 40C 125C 0.01 IC/IB=20/1 Pulsed 0.001 10 10 0.1 1 10 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 EMITTER TO BASE VOLTAGE : VEB(V) BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.5 Gain bandwidth product Fig.4 Grounded emitter propagation Fig 6. Collector output capacitance vs. collector-base voltage vs. emitter current charactereistics Emitter input capacitance vs. emitter-base volatage 20190527-Rev.D2/2 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fr (MHz) BASE SATURATION VOLTAGE : VBE(sat) (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)