X-On Electronics has gained recognition as a prominent supplier of 2SB1733TL bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SB1733TL bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SB1733TL ROHM

2SB1733TL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SB1733TL
Manufacturer: ROHM
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 1 A 320MHz 800 mW Surface Mount TUMT3
Datasheet: 2SB1733TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3979 ea
Line Total: USD 0.4

Availability - 2459
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2459 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.3381
100 : USD 0.238
500 : USD 0.2081
1000 : USD 0.1691
3000 : USD 0.138
9000 : USD 0.1323
45000 : USD 0.1288

2308 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 239
Multiples : 1
239 : USD 0.1739
500 : USD 0.149
1000 : USD 0.1412
2000 : USD 0.1317

2625 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 195
Multiples : 1
195 : USD 0.5456
250 : USD 0.5236
500 : USD 0.5048
1000 : USD 0.4883
2500 : USD 0.4738

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SB1733TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1733TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

2SB1733 General purpose amplification (-30V, -1A) Datasheet llOutline SOT-323T Parameter Value V -30V CEO I -1A C TUMT3 llFeatures llInner circuit 1)A collector current is large. 2)Collector-Emitter saturation voltage is low. V :max.-350mV CE(sat) at I =-500mA/I =-25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-323T 2SB1733 2021 TL 180 8 3000 EW (TUMT3) www.rohm.com 1/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. 2SB1733 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P 400 mW D Power dissipation *3 P 800 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -30V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -25mA - -150 -350 mV CE(sat) C B h DC current gain V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Pw=1ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm ). www.rohm.com 2/6 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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