X-On Electronics has gained recognition as a prominent supplier of 2SC4061KT146N Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4061KT146N Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4061KT146N ROHM

Hot 2SC4061KT146N electronic component of ROHM
2SC4061KT146N ROHM
2SC4061KT146N Bipolar Transistors - BJT
2SC4061KT146N  Semiconductors

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See Product Specifications
Part No. 2SC4061KT146N
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 300 V 100 mA 100MHz 200 mW Surface Mount SMT3
Datasheet: 2SC4061KT146N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3076 ea
Line Total: USD 0.31 
Availability - 59
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
59
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3076
10 : USD 0.2388
30 : USD 0.2092
100 : USD 0.1726
500 : USD 0.1055
1000 : USD 0.0987

5977
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.7287
10 : USD 0.4537
100 : USD 0.2668
500 : USD 0.2035
1000 : USD 0.1837
3000 : USD 0.1683
6000 : USD 0.1529
9000 : USD 0.1375
24000 : USD 0.1342

1698
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.896
10 : USD 0.6412
100 : USD 0.3696
125 : USD 0.1554
342 : USD 0.147

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4061KT146N from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4061KT146N and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC4061K Datasheet Chroma amplifier transistor (300V,100mA) llOutline SOT-346 Parameter Value SC-59 V 300V CEO I 100mA C SMT3 llFeatures llInner circuit 1)High breakdown voltage.(BV =300V) CEO 2)Low collector output capacitance. (Typ.3pF at V =30V) CB 3)Ideal for chroma circuit. llApplication CHROMA OUTPUT, VIDEO SIGNAL AMPLIFICATION llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SC4061K 2928 T146 180 8 3000 AN (SMT3) www.rohm.com 1/6 20160315 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SC4061K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 300 V CBO V Collector-emitter voltage 300 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 300 - - V CBO C voltage Collector-emitter breakdown BV I = 100A 300 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 200V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 2 V CE(sat) C B DC current gain h V = 10V, I = 10mA 56 - 180 - FE CE C V = 30V, I = -10mA, CE E f Transition frequency 50 100 - MHz T f = 30MHz V = 30V, I = 0A, CB E C Output capacitance - 3.0 4.5 pF ob f = 1MHz hFE values are calssified as follows : rank N P - - - h 56-120 82-180 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160315 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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