2SC4083 High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Datasheet llOutline SOT-323 Parameter Value SC-70 V 11V CEO I 50mA C UMT3 llFeatures llInner circuit 1)High transition frequency.(Typ.f =3.2GHz) T 2)Small rbb Cc and high gain.(Typ.4ps) 3)Small NF llApplication UHF/VHF FREQUENCY CONVERTER, LOCAL OSCILLATOR llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 2SC4083 2021 T106 180 8 3000 1D (UMT3) llNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 1/6 20150909 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SC4083 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 20 V CBO V Collector-emitter voltage 11 V CEO V Emitter-base voltage 3 V EBO I Collector current 50 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 11 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 3 - - V EBO E I Collector cut-off current V = 10V - - 500 nA CBO CB I Emitter cut-off current V = 2V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 5mA - - 500 mV CE(sat) C B DC current gain h V = 10V, I = 5mA 56 - 270 - FE CE C V = 10V, I = -10mA, CE E Transition frequency f 1.4 3.2 - GHz T f = 500MHz V = 10V, I = 0A, CB E C Output capacitance - 0.8 1.5 pF ob f = 1MHz V = 6V, I = 2mA CB C N Noise figure - 3.5 - dB F f = 500MHz, R = 50 g hFE values are calssified as follows : rank N P Q - - h 56-120 82-180 120-270 - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20150909 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.