2SC4098T106P ROHM

2SC4098T106P electronic component of ROHM
2SC4098T106P ROHM
2SC4098T106P Bipolar Transistors - BJT
2SC4098T106P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SC4098T106P Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4098T106P Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SC4098T106P
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN RF AMP
Datasheet: 2SC4098T106P Datasheet (PDF)
Price (USD)
1595: USD 0.163 ea
Line Total: USD 259.98 
Availability : 0
  
QtyUnit Price
1595$ 0.163
1649$ 0.1577
2500$ 0.153
5000$ 0.1433

Availability 5335
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 1595
Multiples : 1
QtyUnit Price
1595$ 0.163
1649$ 0.1577
2500$ 0.153
5000$ 0.1433

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4098T106P from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4098T106P and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC4098 Datasheet Datasheet High frequency amplifier transistor (25V, 50mA, 300MHz) llOutline SOT-323 Parameter Value SC-70 V 25V CEO I 50mA C UMT3 llFeatures llInner circuit 1)Low collector capacitance. (Cob:Typ.1.3pF) llApplication HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER RF AMPLIFIER, LOCAL OSCILLATOR llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 2SC4098 2021 T106 180 8 3000 A (UMT3) www.rohm.com www.rohm.com 1/6 20161028 - Rev.002 201 20156 R ROHM CoOHM Co., Ltd.., Ltd All r. All rights reserights resevred.ved.Data Sheet 2SC4098 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 40 V CBO V Collector-emitter voltage 25 V CEO V Emitter-base voltage 5 V EBO I Collector current 50 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 40 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 25 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 24V - - 500 nA CBO CB Emitter cut-off current I V = 3V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - 100 300 mV CE(sat) C B h DC current gain V = 6V, I = 1mA 82 - 180 - FE CE C V = 6V, I = -1mA, CE E f Transition frequency 150 300 - MHz T f = 100MHz V = 6V, I = 0A, CB E C Output capacitance - 1.3 2.2 pF ob f = 1MHz hFE values are calssified as follows : rank P - - - - h 82-180 - - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20161028 - Rev.002 www.rohm.com 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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