X-On Electronics has gained recognition as a prominent supplier of 2SC5001TLQ bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SC5001TLQ bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SC5001TLQ

2SC5001TLQ electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SC5001TLQ
Manufacturer: ROHM
Category:Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN; HFE RANK Q CPT3
Datasheet: 2SC5001TLQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.4928 ea
Line Total: USD 1232

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun


Multiples : 1

0 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 1.0453

0 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.648
5000 : USD 0.6
7500 : USD 0.6
10000 : USD 0.6

0 - WHS 4


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.5164
5000 : USD 0.5164
10000 : USD 0.4968
25000 : USD 0.4956

0 - WHS 5


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 21
Multiples : 1
21 : USD 1.3083

0 - WHS 6


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.4928

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the 2SC5001TLQ Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the 2SC5001TLQ Bipolar Transistors - BJT.

2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Collector CPT3 Parameter Value V 20V CEO Base I 10A C Emitter 2SC5001 lFeatures (SC-63) <SOT-428> 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low V CE(sat) V = 0.25V(Max.) CE(sat) (I /I = 4A/ 0.05A) C B 4) Large collector current : I = 10A (DC Max.) C 5) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver , LED driver Base Power supply , strobe Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SC5001 CPT3 6595 TL 330 16 2,500 C5001 www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.B 1/6 Not Recommended for New DesignsData Sheet 2SC5001 lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 20 V CEO V Emitter-base voltage 6 V EBO I DC 10 A C Collector current *1 15 A Pulsed I CP *2 1 W P D Power dissipation *3 10 W P D T 150 C Junction temperature j T Range of storage temperature -55 to +150 C stg *1 Pw=10ms , single pulse *2 Mounted on a substrate *3 Tc=25C lElectrical characteristics (Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 20 - - V CEO C breakdown voltage Collector-base BV I = 50mA 30 - - V CBO C breakdown voltage Emitter-base BV I = 50mA 6 - - V EBO E breakdown voltage Collector cut-off current I V = 20V - - 1 mA CBO CB Emitter cut-off current I V = 5V - - 1 mA EBO EB Collector-emitter V I = 4A, I = 0.05A - 0.13 0.25 V CE(sat) C B saturation voltage Base-emitter V I = 4A, I = 0.05A - 0.9 1.2 V BE(sat) C B saturation voltage h 1 V = 2V, I = 0.5A 120 - 390 - FE CE C DC current gain h 2 V = 2V, I = 4A 82 - - - FE CE C V = 5V, I = -1.5A CE E f Transition frequency - 150 - MHz T f=50MH Z V = 10V, I = 0A CB E C Output capacitance - 220 - pF ob f = 1MHz lh rank categories FE Rank Q R h 120 to 270 180 to 390 FE www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.B 2/6 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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