X-On Electronics has gained recognition as a prominent supplier of 2SC5658T2LQ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5658T2LQ Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5658T2LQ ROHM

2SC5658T2LQ electronic component of ROHM
2SC5658T2LQ ROHM
2SC5658T2LQ Bipolar Transistors - BJT
2SC5658T2LQ  Semiconductors

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See Product Specifications
Part No. 2SC5658T2LQ
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 150 mA 180MHz 150 mW Surface Mount VMT3
Datasheet: 2SC5658T2LQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0482 ea
Line Total: USD 0.48 
Availability - 349
Ship by Mon. 04 Aug to Thu. 07 Aug
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
26711
Ship by Thu. 24 Jul to Mon. 28 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4438
10 : USD 0.2737
100 : USD 0.1668
500 : USD 0.1155
1000 : USD 0.0946
2500 : USD 0.0935
5000 : USD 0.0792
8000 : USD 0.0715
24000 : USD 0.0693

4039
Ship by Mon. 28 Jul to Fri. 01 Aug
MOQ : 3258
Multiples : 1
3258 : USD 0.0798
3356 : USD 0.0775

349
Ship by Mon. 04 Aug to Thu. 07 Aug
MOQ : 10
Multiples : 10
10 : USD 0.0482
100 : USD 0.0468
300 : USD 0.046
1000 : USD 0.0305

5852
Ship by Mon. 28 Jul to Fri. 01 Aug
MOQ : 1078
Multiples : 1
1078 : USD 0.2951
2000 : USD 0.1391

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC5658T2LQ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5658T2LQ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The 2SC5658T2LQ is a Bipolar (BJT) Transistor NPN 50 V 150 mA 180MHz 150 mW Surface Mount VMT3 manufactured by ROHM. It is a high breakdown voltage, low saturation voltage, and high power transistor which combines high reliability and cost-performance balance. It is ideal for use in general-purpose audio applications. It is packaged in a VMT3 SMT package and features a total power dissipation of 150 mW at ambient air temperature 25°C. It has a maximum DC collector current of 150 mA and a maximum collector-emitter voltage of 50 V. It has a high transition frequency of 180 MHz, which makes it suitable for high-frequency operation. It also has a high collector-emitter breakdown voltage of 80 V. Additionally, it has a maximum collector-base voltage of 60 V and a maximum emitter-base voltage of 6 V, making it an excellent choice for general-purpose applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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