2SC5876T106Q ROHM

2SC5876 Datasheet Medium power transistor (60V, 0.5A) llOutline Parameter Value UMT3 V 60V CEO I 500mA C SOT-323 SC-70 llFeatures 1)High speed switching. llInner circuit (Tf:Typ.:80ns at I =500mA) C 2)Low saturation voltage, typically (Typ.:150mV at I =100mA, I =10mA) C B 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SA2088. llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SC5876 UMT3 2021 T106 180 8 3000 VS www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.2SC5876 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 60 V CEO Emitter-base voltage V 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP *2 Power dissipation P 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 60 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 6 - - V EBO E I Collector cut-off current V = 40V - - 1 A CBO CB Emitter cut-off current I V = 4V - - 1 A EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 150 300 mV CE(sat) C B h DC current gain V = 2V, I = 50mA 120 - 390 - FE CE C V = 10V, I = -100mA, CE E *3 Transition frequency - 300 - MHz f T f = 100MHz V = 10V, I = 0mA, CB E C Output capacitance - 5 - pF ob f = 1MHz *3 I = 500mA, C Turn-On time t - 70 - ns on I = 50mA, B1 I = -50mA, B2 *3 Storage time t - 130 - ns stg V 25V, CC R = 50 L *3 t Fall time - 80 - ns f See test circuit hFE values are calssified as follows : rank Q R - - - hFE 120-270 180-390 - - - *1 Pw=10ms *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.