2SCR512RTL ROHM

2SCR512R Datasheet NPN 2.0A 30V Middle Power Transistor llOutline Parameter Value TSMT3 V 30V CEO I 2A C SOT-346T SC-96 llFeatures 1)Suitable for Middle Power Driver llInner circuit 2)Complementary PNP Types:2SAR512R 3)Low V CE(sat) V =400mV(Max.) CE(sat) (I /I =700mA/35mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SCR512R TSMT3 2928 TL 180 8 3000 NB www.rohm.com 1/6 20150730 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.2SCR512R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 2 A C Collector current *1 I 4 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 6 - - V EBO E I Collector cut-off current V = 30V - - 1.0 A CBO CB Emitter cut-off current I V = 4V - - 1.0 A EBO EB *4 Collector-emitter saturation voltage I = 700mA, I = 35mA V - 200 400 mV C B CE(sat) h DC current gain V = 2V, I = 100mA 200 - 500 - FE CE C V = 10V, I = -100mA, CE E *4 Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 10 - pF ob f = 1MHz I = 1A, C t Turn-On time - 25 - ns on I = 100mA, B1 I = -100mA, B2 t Storage time - 240 - ns stg V 10V, CC R = 10 L t Fall time - 20 - ns f See test circuit *1 P =10ms Single pulse W *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm). *4 Pulsed www.rohm.com 2/6 20150730 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.