2SCR522EBTL ROHM

2SCR522EBTL electronic component of ROHM
2SCR522EBTL ROHM
2SCR522EBTL Bipolar Transistors - BJT
2SCR522EBTL Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SCR522EBTL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR522EBTL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SCR522EBTL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 20 V 200 mA 400MHz 150 mW Surface Mount EMT3F (SOT-416FL)
Datasheet: 2SCR522EBTL Datasheet (PDF)
Price (USD)
1: USD 0.18 ea
Line Total: USD 0.18 
Availability : 6712
  
Ship by Fri. 14 Nov to Tue. 18 Nov
QtyUnit Price
1$ 0.18
10$ 0.1075
100$ 0.0663
500$ 0.0449
1000$ 0.0374
3000$ 0.0308
9000$ 0.0231
24000$ 0.022

 2SCR522EBTL More Buying Options & Price Grid(s)
Availability 6712
Ship by Fri. 14 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.18
10$ 0.1075
100$ 0.0663
500$ 0.0449
1000$ 0.0374
3000$ 0.0308
9000$ 0.0231
24000$ 0.022

Availability 5402
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 2253
Multiples : 1
QtyUnit Price
2253$ 0.1298
3253$ 0.0799

Specifications

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SCR522EBTL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR522EBTL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SCR522M / 2SCR522EB / 2SCR522UB NPN 200mA 20V General Purpose Transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V 20V CEO I 200mA C 2SCR522M 2SCR522EB (VMT3) (EMT3F) SOT-323FL 2SCR522UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary PNP Types: 2SAR522M (VMT3) / 2SAR522EB (EMT3F) / 2SAR522UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SCR522M 1212 T2L 180 8 8000 NC (VMT3) SOT-416FL 2SCR522EB 1616 TL 180 8 3000 NC (EMT3F) SOT-323FL 2SCR522UB 2021 TL 180 8 3000 NC (UMT3F) www.rohm.com 1 / 8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SCR522M / 2SCR522EB / 2SCR522UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 20 V CBO Collector-emitter voltage V 20 V CEO V Emitter-base voltage 5 V EBO I 200 mA C Collector current *1 I 400 mA CP 2SCR522M 150 *2 P Power dissipation 2SCR522EB 150 mW D 2SCR522UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 20V - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 120 300 mV CE(sat) C B h DC current gain V = 2V, I = 1mA 120 - 560 - FE CE C V = 10V, I = -10mA, CE E f Transition frequency - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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