2SCR522M / 2SCR522EB / 2SCR522UB NPN 200mA 20V General Purpose Transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V 20V CEO I 200mA C 2SCR522M 2SCR522EB (VMT3) (EMT3F) SOT-323FL 2SCR522UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary PNP Types: 2SAR522M (VMT3) / 2SAR522EB (EMT3F) / 2SAR522UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SCR522M 1212 T2L 180 8 8000 NC (VMT3) SOT-416FL 2SCR522EB 1616 TL 180 8 3000 NC (EMT3F) SOT-323FL 2SCR522UB 2021 TL 180 8 3000 NC (UMT3F) www.rohm.com 1 / 8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SCR522M / 2SCR522EB / 2SCR522UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 20 V CBO Collector-emitter voltage V 20 V CEO V Emitter-base voltage 5 V EBO I 200 mA C Collector current *1 I 400 mA CP 2SCR522M 150 *2 P Power dissipation 2SCR522EB 150 mW D 2SCR522UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 20V - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 120 300 mV CE(sat) C B h DC current gain V = 2V, I = 1mA 120 - 560 - FE CE C V = 10V, I = -10mA, CE E f Transition frequency - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.