2SCR523MT2L ROHM

2SCR523MT2L electronic component of ROHM
2SCR523MT2L ROHM
2SCR523MT2L Bipolar Transistors - BJT
2SCR523MT2L Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SCR523MT2L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR523MT2L Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SCR523MT2L
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN General Purpose Amplification Transistor
Datasheet: 2SCR523MT2L Datasheet (PDF)
Price (USD)
1: USD 0.285 ea
Line Total: USD 0.28 
Availability : 13626
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 0.285
10$ 0.1763
100$ 0.1068
500$ 0.0715
1000$ 0.0583
5000$ 0.0484
8000$ 0.0418
24000$ 0.0396

 2SCR523MT2L More Buying Options & Price Grid(s)
Availability 46020
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3111
Multiples : 1
QtyUnit Price
3111$ 0.0836
3206$ 0.0811
5000$ 0.0789
10000$ 0.074
25000$ 0.0724

Availability 13626
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.285
10$ 0.1763
100$ 0.1068
500$ 0.0715
1000$ 0.0583
5000$ 0.0484
8000$ 0.0418
24000$ 0.0396

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SCR523MT2L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR523MT2L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SCR523M / 2SCR523EB / 2SCR523UB NPN 100mA 50V General Purpose Transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V 50V CEO I 100mA C 2SCR523M 2SCR523EB (VMT3) (EMT3F) SOT-323FL 2SCR523UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary PNP Types: 2SAR523M (VMT3) / 2SAR523EB (EMT3F) / 2SAR523UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SCR523M 1212 T2L 180 8 8000 NB (VMT3) SOT-416FL 2SCR523EB 1616 TL 180 8 3000 NB (EMT3F) SOT-323FL 2SCR523UB 2021 TL 180 8 3000 NB (UMT3F) www.rohm.com 1 / 8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SCR523M / 2SCR523EB / 2SCR523UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO Collector-emitter voltage V 50 V CEO V Emitter-base voltage 5 V EBO I 100 mA C Collector current *1 I 200 mA CP 2SCR523M 150 *2 P Power dissipation 2SCR523EB 150 mW D 2SCR523UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 50V - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - 100 300 mV CE(sat) C B h DC current gain V = 6V, I = 1mA 120 - 560 - FE CE C V = 10V, I = -10mA, CE E f Transition frequency - 350 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 1.6 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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