2SCR542P Datasheet Middle Power Transistor (30V / 5A) llOutline SOT-89 Parameter Value SC-62 V 30V CEO I 5A C MPT3 llFeatures llInner circuit 1)Low saturation voltage,typically V =400mV(Max.) CE(sat) (I /I =2A/100mA) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SCR542P 4540 T100 180 12 1000 NQ (MPT3) www.rohm.com 1/6 20160930 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.2SCR542P Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 5 A C Collector current *1 I 10 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E Collector cut-off current I V = 30V - - 1.0 A CBO CB I Emitter cut-off current V = 4V - - 1.0 A EBO EB *4 Collector-emitter saturation voltage I = 2A, I = 100mA - 200 400 mV V C B CE(sat) DC current gain h V = 2V, I = 500mA 200 - 500 - FE CE C V = 10V, I = -100mA, CE E *4 Transition frequency - 250 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 25 - pF ob f = 1MHz I = 2.5A, C t Turn-On time - 40 - ns on I = 250mA, B1 I = -250mA, B2 t Storage time - 320 - ns stg V 10V, CC R = 3.9 L Fall time t - 25 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20160930 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.