2SCR554P5 Datasheet Middle Power Transistors (80V / 1.5A) llOutline SOT-89 Parameter Value SC-62 V 80V CEO I 1.5A C MPT3 llFeatures llInner circuit 1)Low saturation voltage,typically V =300mV(Max.) CE(sat) (I /I =500mA/25mA) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SCR554P5 4540 T100 180 12 1000 NH (MPT3) www.rohm.com 1/6 20150730 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.2SCR554P5 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 80 V CBO V Collector-emitter voltage 80 V CEO V Emitter-base voltage 6 V EBO I 1.5 A C Collector current *1 I 3.0 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 80 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 80 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 80V - - 1.0 A CBO CB Emitter cut-off current I V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 100 300 mV CE(sat) C B DC current gain h V = 3V, I = 100mA 120 - 390 - FE CE C V = 10V, I = -200mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 10 - pF ob f = 1MHz I = 700mA, C t Turn-On time - 50 - ns on I = 70mA, B1 I = -70mA, B2 Storage time t - 600 - ns stg V 10V, CC R = 15 L t Fall time - 60 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) www.rohm.com 2/6 20150730 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.