2SCR572D3FRATL ROHM

2SCR572D3 FRA NPN 5.0A 30V Power Transistor Datasheet AEC-Q101 Qualified llOutline Parameter Value DPAK V 30V CEO I 5A C TO-252 llFeatures llInner circuit 1) Suitable for Power Driver. 2) Complementary PNP Types : 2SAR572D3 FRA. 3) Low V CE(sat) V =400mV(Max.). CE(sat) (I /I =2A/100mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Taping Reel size Tape width Quantity Part No. Package Marking code (mm) (mm) (pcs) TO-252 2SCR572D3 FRA TL 330 16 2500 2SCR572D3 (DPAK) www.rohm.com 1/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. 2SCR572D3 FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 5 A C Collector current *1 I 10 A CP *2 P Power dissipation 10 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = 100A 30 - - V CBO C Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 6 - - V EBO E Collector cut-off current I V = 30V - - 1 A CBO CB I Emitter cut-off current V = 4V - - 1 A EBO EB Collector-emitter saturation voltage V I = 2A, I = 100mA - 200 400 mV CE(sat) C B DC current gain h V = 3V, I = 500mA 200 - 500 - FE CE C V = 10V, I = -500mA, CE E *3 Transition frequency - 300 - MHz f T f = 100MHz V = 10V, I = 0A, CB E Output capacitance C - 30 - pF ob f = 1MHz t Turn-On time I = 2.5A, - 100 - ns on C I = 250mA, B1 I = -250mA, B2 t Storage time - 350 - ns stg V 10V, CC R = 4 L t Fall time - 250 - ns f See test circuit *1 Pw=10ms Single Pulse *2 Tc=25 *3 Pulsed www.rohm.com 2/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.