2SD1733 Datasheet Power Transistor(80V,1A) llOutline Parameter Value CPT V 80V CEO I 1A C TO-252 SC-63 llFeatures 1)High V ,VCEO=80V llInner circuit CEO 2)High I ,I =1A(DC) C C 3)Good hFE linearity 4)Low V CE(sat) 5)Complements the 2SB1181 llApplication Low frequency power amplifier llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD1733 CPT 6595 TL 330 16 2500 D1733 www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SD1733 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 80 V CEO V Emitter-base voltage 5 V EBO I Collector current 1 A C *1 P 1 W D Power dissipation *2 P 10 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 80 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 100V - - 1.0 A CBO CB I Emitter cut-off current V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 500mA, I = 20mA - - 400 mV CE(sat) C B h V = 3V, I = 500mA DC current gain 82 - 390 - FE CE C V = 10V, I = -50mA, CE E f Transition frequency - 100 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 20 - pF ob f = 1MHz hFE values are calssified as follows : rank P Q R - - h 82-180 120-270 180-390 - - FE *1 Ta=25 *2 Tc=25 www.rohm.com 2/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.