2SD2654 General purpose Transistor (50V, 150mA) Datasheet llOutline SOT-416 Parameter Value SC-75A V 50V CEO I 150mA C EMT3 llFeatures llInner circuit 1)High DC current gain. 2)High emitter-base voltage. (V =12V) CBO 3)Low saturation voltage. (Max.V =300mV at I /I =50/5mA) CE(sat) C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-416 2SD2654 1616 TL 180 8 3000 BJ (EMT3) www.rohm.com 1/6 20151209 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2654 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 12 V EBO I 150 mA C Collector current *1 I 200 mA CP *2 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 12 - - V EBO E Collector cut-off current I V = 50V - - 300 nA CBO CB I Emitter cut-off current V = 12V - - 300 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 300 mV CE(sat) C B DC current gain h V = 5V, I = 1mA 560 - 2700 - FE CE C V = 5V, I = -10mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = 5V, I = 0A, CB E C Output capacitance - 3.5 - pF ob f = 1MHz hFE values are calssified as follows : rank U V W - - h 560-1200 820-1800 1200-2700 - - FE *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20151209 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.