X-On Electronics has gained recognition as a prominent supplier of 2SD2701TL bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SD2701TL bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SD2701TL ROHM

Hot 2SD2701TL electronic component of ROHM
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See Product Specifications
Part No.2SD2701TL
Manufacturer: ROHM
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 12 V 2 A 300MHz 800 mW Surface Mount TUMT3
Datasheet: 2SD2701TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1786 ea
Line Total: USD 0.89

Availability - 2910
Ships to you between
Fri. 14 Jun to Wed. 19 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2910 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1786
50 : USD 0.1577
150 : USD 0.1487
500 : USD 0.1374
3000 : USD 0.1324
6000 : USD 0.1295

2121 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5348
10 : USD 0.4669
100 : USD 0.3289
500 : USD 0.2645
1000 : USD 0.2208
3000 : USD 0.1909
9000 : USD 0.1909
24000 : USD 0.1863

2910 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 205
Multiples : 1
205 : USD 0.1982
500 : USD 0.1739
1000 : USD 0.1657
2000 : USD 0.1642
3000 : USD 0.159

2910 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 321
Multiples : 1
321 : USD 0.3178
500 : USD 0.3064
1000 : USD 0.2964
2500 : USD 0.2877

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SD2701TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2701TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

2SD2701 Datasheet General purpose amplification(30V,1.5A) llOutline SOT-323T Parameter Value V 30V CEO I 1.5A C TUMT3 llFeatures llInner circuit 1) Collector current is large. 2) V 350mV CE(sat) at I = 1A / I = 50mA C B 3) Complementary PNP Types : 2SB1731 llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323T 2SD2701 2021 TL 180 8 3000 FZ (TUMT3) www.rohm.com 1/6 20160906 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. 2SD2701 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1.5 A C Collector current *1 I 3 A CP *2 P 0.4 W D Power dissipation *3 P 0.8 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E I Collector cut-off current V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 1A, I = 50mA - 140 350 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E Transition frequency f - 300 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 11 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8 mm). www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160906 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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