2SD2703TL ROHM

2SD2703TL electronic component of ROHM
2SD2703TL ROHM
2SD2703TL Bipolar Transistors - BJT
2SD2703TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SD2703TL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2703TL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SD2703TL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT 30V 1A NPN LOW
Datasheet: 2SD2703TL Datasheet (PDF)
Price (USD)
1471: USD 0.1768 ea
Line Total: USD 260.07 
Availability : 2366
  
Ship by Tue. 02 Sep to Mon. 08 Sep
QtyUnit Price
1471$ 0.1768
1521$ 0.1709

Availability 3515
Ship by Fri. 29 Aug to Tue. 02 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.855
10$ 0.5213
100$ 0.3393
500$ 0.2695
1000$ 0.2409
3000$ 0.2255
6000$ 0.2035
9000$ 0.1914
24000$ 0.1892


Availability 2366
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 1471
Multiples : 1
QtyUnit Price
1471$ 0.1768
1521$ 0.1709


Availability 3579
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 438
Multiples : 1
QtyUnit Price
438$ 0.5941
837$ 0.3107
1000$ 0.2886
2000$ 0.2538

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2703TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2703TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SD2703 Datasheet General purpose amplification (30V, 1A) llOutline SOT-323T Parameter Value V 30V CEO I 1A C TUMT3 llFeatures llInner circuit 1)A collector current is large. 2)Collector-Emitter saturation voltage is low. V 350mV CE(sat) at I =500mA/I =25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323T 2SD2703 2021 TL 180 8 3000 EU (TUMT3) www.rohm.com 1/6 20150731 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2703 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P 400 mW D Power dissipation *3 P 800 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E I Collector cut-off current V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 120 350 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Pw=1ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm ). www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150731 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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