For Muting (20V, 0.3A) 2SD2704K Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 2.9 1.1 2) High emitter-base voltage. VEBO = 25V (Min.) 0.4 0.8 3) Low Ron ( ) 3 Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor (2) (1) (1) Emitter 0.95 0.95 0.15 (2) Base 1.9 (3) Collector Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : XL Packaging specifications Package Taping Code T146 Basic ordering 3000 Type unit (pieces) 2SD2704K Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V VCEO 20 V Collector-emitter voltage VEBO 25 V Emitter-base voltage Collector current IC 0.3 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 C Tstg 55 to +150 C Storage temperature Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 V IC=10A Collector-emitter breakdown voltage BVCEO 20 V IC=1mA Emitter-base breakdown voltage BVEBO 25 V IE=10A Collector cutoff current ICBO 0.1 A VCB=50V Emitter cutoff current IEBO 0.1 A VEB=25V Collector-emitter saturation voltage VCE(sat) 50 100 mV IC/IB=30mA/3mA DC current transfer ratio hFE 820 2700 VCE=2V, IC=4mA Transition frequency 35 MHz VCE=6V, IE= 4mA, f=10MHz fT Output capacitance Cob 3.9 pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron 0.7 IB=5mA, Vi=100mV(rms), f=1kHz Measured using pulse current www.rohm.com 2012.01 - Rev.C 1/3 c 2012 ROHM Co., Ltd. All rights reserved. 1.6 2.8 0.3Min. 2SD2704K Data Sheet Electrical characteristic curves 1000 1000 10000 VCE=2V VCE=6V VCE=2V Ta=125C Ta=125C Ta=125C 100 100 1000 25C 25C Ta=25C 10 40C 10 40C Ta= 40C 100 0.1 0.1 0.1 0.1 10 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(ON) (V) BASE TO EMITTER VOLTAGE : VBE(ON) (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter propagation Fig.3 DC current gain characteristics ( ) characteristics ( ) vs. collector current ( ) 10000 10000 10000 VCE=6V IC/IB=10/1 IC/IB=20/1 Ta=125C 1000 1000 1000 Ta=25C Ta=125C Ta=125C Ta= 40C 100 100 100 Ta=25C Ta=25C 10 10 Ta= 40C Ta= 40C 10 1 1 1 10 100 1000 1 10 100 1000 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current ( ) vs. collector current ( ) vs. collector current ( ) 10000 10000 10000 IC/IB=50/1 IC/IB=10/1 IC/IB=20/1 1000 Ta=125C Ta= 40C Ta= 40C 1000 1000 100 Ta=25C Ta=25C Ta=25C 10 Ta=125C Ta=125C Ta= 40C 1 100 100 1 10 100 1000 1 10 100 1000 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage Fig.8 Base-emitter saturation voltage Fig.9 Base-emitter saturation voltage vs. collector current ( ) vs. collector current ( ) vs. collector current ( ) www.rohm.com 2012.01 - Rev.C 2/3 c 2012 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) DC CURRENT GAIN : hFE