BC857BT116 ROHM

BC857B / BC857BU3 Datasheet PNP General purpose transistor llOutline Parameter Value SOT-23 SOT-323 V -45V CEO I -100mA C BC857B BC857BU3 (SST3) (UMT3) llFeatures llInner circuit 1)BV >45V(I =1mA) CEO C 2)Complements the BC847B/BC847BU3 llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BC857B 2021 T106 180 8 3000 G3F (SST3) SOT-323 BC857BU3 2120 T106 180 8 3000 G3F (UMT3) www.rohm.com 1 / 7 20190128 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. BC857B / BC857BU3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -45 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1 P 200 mW D BC857B *2 P Power dissipation 350 mW D *1 P BC857BU3 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -45 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E V = -30V - - -15 nA CB Collector cut-off current I CBO V = -30V, T = 150 - - -4 A CB a V 1 I = -10mA, I = -0.5mA - - -300 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = -100mA, I = -5mA - - -650 mV CE(sat) C B Base-emitter turn V V = -5V, I = -10mA -600 - -750 mV BE(on) CE C on voltage h DC current gain V = -5V, I = -2mA 210 - 480 - FE CE C V = -5V, I = 20mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = -10V, I = 0A CB E C Output capacitance - 4.5 - pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/7 20190128 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.