EMB3 FHA General purpose (Dual digital transistor) Datasheet AEC-Q101 Qualified llOutline Parameter DTr1 and DTr2 SOT-563 V -50V CEO SC-107C I -100mA C R 4.7k 1 EMT6 llFeatures llInner circuit 1)Two DTA143T chips in a EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB3 FHA 1616 T2R 180 8 8000 B3 (EMT6) www.rohm.com 1/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. EMB3 FHA Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1*2 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I Collector cut-off current V = -50V - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -5mA, I = -0.25mA - - -300 mV CE(sat) C B h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C Input resistance R - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 Characteristics of built-in transistor. www.rohm.com 2/4 2016 ROHM Co., Ltd. All rights reserved. 20161012 - Rev.001