EMZ1FHAT2R ROHM

EMZ1 FHA Datasheet General purpose transistor (dual transistors) AEC-Q101 Qualified <For Tr1(NPN)> llOutline Parameter Value SOT-563 V 50V CEO SC-107C I 150mA C <For Tr2(PNP)> EMT6 Parameter Value V -50V CEO I -150mA C llFeatures llInner circuit 1)Both a 2SA1037AK chip and a 2SC2412K chip in a EMT package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMZ1 FHA 1616 T2R 180 8 8000 Z1 (EMT6) www.rohm.com 1/9 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.EMZ1 FHA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(NPN) Tr2(PNP) Unit V Collector-base voltage 60 -60 V CBO V Collector-emitter voltage 50 -50 V CEO V Emitter-base voltage 7 -6 V EBO I Collector current 150 -150 mA C *1 total P 150 mW D Power dissipation P element 120 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For Tr1(NPN)> a Parameter Symbol Conditions Min. Typ. Max. Unit BV Collector-base breakdown voltage I = 50A 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 7 - - V EBO E Collector cut-off current I V = 60V - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 mV CE(sat) C B h DC current gain V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E f Transition frequency - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(PNP)> a Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = -50A -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz *1 Each terminal mounted on a reference land. www.rohm.com 2/9 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.