Product Information

FMY1AT148

FMY1AT148 electronic component of ROHM

Datasheet
Transistors Bipolar - BJT NPN/PNP 50V 150MA SMT5
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

527: USD 0.0749 ea
Line Total: USD 39.47

2910 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 527  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
77 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1374
50 : USD 0.1107
150 : USD 0.0975
500 : USD 0.0875
3000 : USD 0.0794
6000 : USD 0.0755

3473 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.4761
10 : USD 0.3669
100 : USD 0.207
1000 : USD 0.1529
3000 : USD 0.1368
9000 : USD 0.1242
24000 : USD 0.1242
45000 : USD 0.1196

2910 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 527
Multiples : 1
527 : USD 0.0749
1000 : USD 0.073

2706 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 288
Multiples : 1
288 : USD 0.331
500 : USD 0.3245

1348 - WHS 5


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 288
Multiples : 1
288 : USD 0.3342

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

EMY1 / UMY1N / FMY1A Datasheet Emitter common (dual transistors) <For Tr1(PNP)> llOutline Parameter Value SOT-553 SOT-353 V -50V CEO I -150mA C EMY1 UMY1N <For Tr2(NPN)> (EMT5) (UMT5) Parameter Value SOT-25 V 50V CEO I 150mA C FMY1A (SMT5) llFeatures llInner circuit 1) Included a 2SA1037AK and a 2SC2412K EMY1 / UMY1N transistor in a EMT, UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) PNP and NPN transistors have common emitters. 4) Mounting cost and area can be cut in half. FMY1A llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMY1 1616 T2R 180 8 8000 Y1 (EMT5) SOT-353 UMY1N 2021 TR 180 8 3000 Y1 (UMT5) SOT-25 FMY1A 2928 T148 180 8 3000 Y1 (SMT5) www.rohm.com 1/11 20150825 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMY1 / UMY1N / FMY1A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit V Collector-base voltage -60 60 V CBO Collector-emitter voltage V -50 50 V CEO V Emitter-base voltage -6 7 V EBO I Collector current -150 150 mA C *1 *2 EMY1/ UMY1N P 150 mW/Total D Power dissipation *1 FMY1A P 300 mW/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -50A -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 50A 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 7 - - V EBO E I Collector cut-off current V = 60V - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 V CE(sat) C B DC current gain h V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/11 20150825 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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