X-On Electronics has gained recognition as a prominent supplier of MMSTA06T146 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. MMSTA06T146 bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

MMSTA06T146 ROHM

MMSTA06T146 electronic component of ROHM
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See Product Specifications
Part No.MMSTA06T146
Manufacturer: ROHM
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 350 mW Surface Mount SMT3
Datasheet: MMSTA06T146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1526 ea
Line Total: USD 457.8

Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1526
6000 : USD 0.1405
9000 : USD 0.1264
30000 : USD 0.1245
75000 : USD 0.1171

0 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5674
10 : USD 0.4209
100 : USD 0.2528
500 : USD 0.2341
1000 : USD 0.1592

0 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5674
10 : USD 0.4209
100 : USD 0.2528
500 : USD 0.2341
1000 : USD 0.1592

0 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.0949
9000 : USD 0.0879
12000 : USD 0.0879
30000 : USD 0.0879
45000 : USD 0.0879

0 - WHS 5


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4083
10 : USD 0.3174
100 : USD 0.1794
1000 : USD 0.1288
3000 : USD 0.1173
9000 : USD 0.1081
24000 : USD 0.1081
45000 : USD 0.1081

0 - WHS 6


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 475
Multiples : 1
475 : USD 0.0837
500 : USD 0.077
1000 : USD 0.0728

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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SSTA06 / MMSTA06 Transistors NPN General Purpose Transistor SSTA06 / MMSTA06 z Features z Dimensions (Unit : mm) 1) BVCEO < 80V ( IC=1mA) SSTA06 2) Complements the SSTA56 / MMSTA56. z Package, marking and packaging specifications Part No. SSTA06 MMSTA06 (1) Emitter Packaging type SST3 SMT3 (2) Base R1G R1G Mark ROHM : SST3 (3) Collector Code T116 T146 Basic ordering unit (pieces) 3000 3000 MMSTA06 (1) Emitter (2) Base ROHM : SMT3 EIAJ : SC-59 (3) Collector z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 4 V Collector current IC 0.5 A 0.2 W Collector power dissipation PC 0.35 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Mounted on 7 x 5 x 0.6mm ceramic substrate. z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 80 V IC=100A Collector-emitter breakdown voltage BVCEO 80 V IC=1mA Emitter-base breakdown voltage BVEBO 4 VIE=100A ICBO 0.1 VCB=80V Collector cutoff current A ICEO 1 VCE=60V Collector-emitter saturation voltage VCE(sat) 0.25 V IC/IB=100mA/10mA Base-emitter saturation voltage VBE(ON) 1.2 V VCE/IB=1V/100mA 100 VCE=1V, IC=10mA DC current transfer ratio hFE 100 VCE=1V, IC=100mA Transition frequency fT 100 MHz VCE=2V, IE= 10mA, f=100MHz Rev.B 1/3 Not Recommended for New DesignsSSTA06 / MMSTA06 Transistors z Electrical characteristics curves 100 500A Ta=25C Ta=25C 450A IC / IB=10 0.3 400A 80 350A 300A 60 0.2 250A 200A 40 150A 0.1 Ta=125C 100A 20 50A 25C 40C IB=0A 0 0 0 1.0 2.0 3.0 4.0 5.0 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter output Fig.2 Collector-emitter saturation characteristics voltage vs. collector current 1000 Ta=25C 5V VCE=10V 100 3V 1V 10 0.1 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( I ) 1000 1.8 Ta=25C Ta=25C VCE=5V 1.6 IC / IB=10 Ta=125C 1.4 25C 1.2 40C 1.0 Ta=40C 100 0.8 25C 0.6 125C 0.4 0.2 10 0 0.1 1.0 10 100 1000 1 10 100 1000 COLLECTOR CURRENT IC : (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( II ) Fig.5 Base-emitter saturation voltage vs. collector current Rev.B 2/3 Not Recommended for New Designs DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) ASE EMITTER SATURATION VOLTAGEV : BE(sat) (V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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