QS5Y2FSTR ROHM

QS5Y2 Datasheet Middle Power Transistor(-50V, -3A PNP/ 50V, 3A NPN) <For Tr1(PNP)> llOutline Parameter Value SOT-25T V -50V CEO I -3A C <For Tr2(NPN)> TSMT5 Parameter Value V 50V CEO I 3A C llFeatures llInner circuit 1)Low saturation voltage, typically V =-400mV(Max.)(I /I =-1A/-50mA) CE(sat) C B V =350mV(Max.)(I /I =1A/50mA) CE(sat) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-25T QS5Y2 2928 TR 180 8 3000 Y02 (TSMT5) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit V Collector-base voltage -50 50 V CBO Collector-emitter voltage V -50 50 V CEO V Emitter-base voltage -6 6 V EBO I -3 3 A C Collector current *1 I -6 6 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 1/9 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.QS5Y2 Datasheet llElectrical characteristics (T = 25C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -100A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -50V - - -1.0 A CBO CB I V = -4V Emitter cut-off current - - -1.0 A EBO EB *5 Collector-emitter saturation voltage V I = -1A, I = -50mA - -200 -400 mV CE(sat) C B h V = -3V, I = -50mA DC current gain 180 - 450 - FE CE C V = -10V, I = 500mA, CE E *5 Transition frequency f - 300 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 24 - pF ob f = 1MHz t Turn-On time - 45 - ns on I = -1.5A,V -12V, C CC t Storage time I = -0.15A,I = 0.15A, - 250 - ns stg B1 B2 (See test circuit) t Fall time - 35 - ns f llElectrical characteristics (T = 25C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 100A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 50V - - 1.0 A CBO CB I Emitter cut-off current V = 4V - - 1.0 A EBO EB *5 Collector-emitter saturation voltage V I = 1A, I = 50mA - 130 350 mV CE(sat) C B h V = 3V, I = 50mA DC current gain 180 - 450 - FE CE C V = 10V, I = -500mA, CE E *5 Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 13 - pF ob f = 1MHz Turn-On time ton - 50 - ns I = 1.5A,V 12V C CC Storage time tstg - 450 - ns I = 0.15A,I = -0.15A B1 B2 (See test circuit) Fall time tf - 80 - ns *1 Pw=10ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm). *4 900mW per element must not be exceeded. *5 Pulsed www.rohm.com 2/9 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.