Product Information

RFN3BM6STL

RFN3BM6STL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V Vrm 3A Io Std Fast Rec Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1501 ea
Line Total: USD 1.15

2419 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2419 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.0005
10 : USD 0.9005
100 : USD 0.7188
500 : USD 0.6107
1000 : USD 0.4968
2500 : USD 0.4566
5000 : USD 0.4566
10000 : USD 0.4393
25000 : USD 0.4382

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFN3BM6S Data Sheet lSeries lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 6.0 Standard Fast Recovery lApplication 1.6 1.6 General rectification 1 TO-252 2.3 2.3 lFeatures Cathode 1) Low switching loss lStructure ROHM : TO-252 2) Low forward voltage JEITA : SC-63 1 : Manufacture Date Open Anode lConstruction lTaping Dimensions (Unit : mm) 2.00.05 1.550.1 4.00.1 8.00.1 f1.550.1 0.40.1 Silicon epitaxial planar type 0 TL f3.30.000.1 .1 6.80.1 8.00.1 2.70.2 lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R I 60Hz half sin wave , Resistive load T =112C Average rectified foward current c 3 A o 60Hz half sin wave ,Non-repetitive at T =25C Forward current surge peak I 20 j A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =3A Forward voltage V - 1.35 1.55 V F F I V =600V Reverse current - 0.05 10 mA R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 18 30 ns F R R Thermal resistance R Junction to case - - 6.0 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 1/4 10.10.1 00.5 13.50.2 7.50.05 2.50.1 16.00.2 10.10.1 3.0 2.0 6.0 Data Sheet RFN3BM6S lElectrical characteristic curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j 1 T = 150 C j 100 T = 125 C j T = 25 C j 0.1 T = 75 C j 10 T = 25 C j 0.01 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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